MEMORY CELL, AND MEMORY AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2023/103182

A1

Provided in the present disclosure are a memory cell, and a memory and a manufacturing method therefor. The memory cell comprises a transistor, a storage node contact and a capacitor, which are sequentially connected. The capacitor comprises a lower electrode, an upper electrode and a dielectric layer. The dielectric layer is located between the lower electrode and the upper electrode. The lower electrode comprises a first electrode layer, which has a first sub-electrode area and a plurality of second sub-electrode areas which are connected to the first sub-electrode area, wherein the first sub-electrode area is in contact with a surface of the storage node contact; each second sub-electrode area extends in a direction away from the storage node contact, and each second sub-electrode area has, in the extending direction, a first end face and a second end face which are opposite each other, which first end face is in contact with the surface of the storage node contact; and a second electrode layer, which covers at least part of the surface of the first electrode layer. By means of a double-sided capacitor structure, the area of a capacitor is increased, and the capacitor structure can increase the electricity storage capacity of the capacitor without increasing the size of the capacitor, thereby facilitating integration of the capacitor.

WU GONGYI (CN)
WANG XIAOLING (CN)

PCT/CN2022/077310

June 15, 2023

February 22, 2022

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CHANGXIN MEMORY TECH INC (CN)

H01L27/108; H01L49/02; H01L21/8242

US20110292717A1	2011-12-01
CN113764417A	2021-12-07
US20200395436A1	2020-12-17
US20030224571A1	2003-12-04
US20020179948A1	2002-12-05
US20020003280A1	2002-01-10

KANGXIN PARTNERS, P.C. (CN)

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