Title:
A MEMORY DEVICE FOR AN ARTIFICIAL NEURAL NETWORK
Document Type and Number:
WIPO Patent Application WO/2022/092988
Kind Code:
A1
Abstract:
A memory device for an artificial neural network (ANN) includes at least one memory cell array of N columns and M rows; and a memory controller configured to sequentially perform a read or write operation of data of the at least one memory cell array in a burst mode based on predetermined sequential access information. Each of the at least one memory cell array may include a plurality of dynamic memory cells having a leakage current characteristic. The memory device may further include a processor configured to provide the memory controller with the ANN data locality information or information for identifying an input feature map, a kernel, and an output feature map.
Inventors:
KIM LOK WON (KR)
Application Number:
PCT/KR2021/015722
Publication Date:
May 05, 2022
Filing Date:
November 02, 2021
Export Citation:
Assignee:
DEEPX CO LTD (KR)
International Classes:
G06N3/063; G06F12/02; G06F12/0804; G06F12/0811; G06F13/16; G06F13/18; G06N3/08
Foreign References:
| US20190236445A1 | 2019-08-01 | |||
| US20190205746A1 | 2019-07-04 | |||
| US20190057300A1 | 2019-02-21 | |||
| KR20190018888A | 2019-02-26 | |||
| KR20140088725A | 2014-07-11 |
Attorney, Agent or Firm:
INVENSYNC INTELLECTUAL PROPERTY GROUP (KR)
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