Title:
MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/029563
Kind Code:
A1
Abstract:
The present disclosure relates to a memory device and a manufacturing method therefor. The memory device comprises: a substrate, a common source line, a plurality of gate word lines, a plurality of columnar structures, and a gate dielectric layer. The common source line is arranged on the substrate. The plurality of gate word lines are arranged above the common source line in parallel at intervals, and the gate word lines extend in a first direction. The plurality of columnar structures are arranged on the common source line in an array shape, and pass through the gate word lines. Columnar structures of adjacent rows are staggered in the row direction, and columnar structures of adjacent columns are staggered in the column direction. The gate dielectric layer is positioned between the columnar structures and the gate word lines. The present memory device and the manufacturing method therefor can further improve the memory integration density of the memory device, and have good and stable memory performance.
Inventors:
WANG XIAOGUANG (CN)
ZENG DINGGUI (CN)
LI HUIHUI (CN)
CAO KANYU (CN)
ZENG DINGGUI (CN)
LI HUIHUI (CN)
CAO KANYU (CN)
Application Number:
PCT/CN2022/091926
Publication Date:
March 09, 2023
Filing Date:
May 10, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
International Classes:
H01L21/336
Domestic Patent References:
| WO2020181410A1 | 2020-09-17 |
Foreign References:
| CN108461496A | 2018-08-28 | |||
| CN108493188A | 2018-09-04 | |||
| CN112038345A | 2020-12-04 | |||
| JP2010114369A | 2010-05-20 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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