Title:
MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2021/130598
Kind Code:
A1
Abstract:
Provided is a highly reliable memory device. This memory device is formed by repeating, multiple times, a cycle consisting of a first step, a second step, and a third step. In the first step, a first insulating body is formed on a substrate; a second insulating body is formed on the first insulating body; a third insulating body is formed on the second insulating body; an opening that penetrates through the first insulating body, the second insulating body and the third insulating body is formed; a fourth insulating body is formed inside the opening, on inner side surfaces of the first insulating body, the second insulating body, and the third insulating body; an oxide semiconductor body is formed inside the fourth insulating body; the second insulating body is removed; an electroconductive body is formed between the first insulating body and the third insulating body; and the fourth insulating body is for supplying a gas containing silicon and an oxidizing gas into a chamber in which the substrate is disposed. In the second step, the supply of the gas containing silicon to the chamber is stopped. In the third step, a plasma that includes the oxidizing gas is generated in the chamber.
Inventors:
YAMAZAKI SHUNPEI (JP)
KAKEHATA TETSUYA (JP)
JINBO YASUHIRO (JP)
EGI YUJI (JP)
KAKEHATA TETSUYA (JP)
JINBO YASUHIRO (JP)
EGI YUJI (JP)
Application Number:
PCT/IB2020/061918
Publication Date:
July 01, 2021
Filing Date:
December 15, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/316; H01L21/336; H01L21/8242; H01L27/108; H01L27/11556; H01L27/1156; H01L29/786; H01L29/788; H01L29/792
Foreign References:
| JP2019008862A | 2019-01-17 | |||
| JP2019009472A | 2019-01-17 | |||
| JP2011249803A | 2011-12-08 | |||
| JP2004336019A | 2004-11-25 |
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