Title:
MEMORY DEVICE AND OPERATING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2024/087140
Kind Code:
A1
Abstract:
A memory device includes a first word line, a memory cell array including a first set of phase-change memory (PCM) cells electrically connected to the first word line, and a word line driver electrically connected to the first set of PCM cells through the first word line. The word line driver is configured to, in a clock cycle, apply a first voltage to the first set of PCM cells after a start of the clock cycle through the first word line to reset the first set of PCM cells. A duration of the clock cycle is longer than a duration of the first voltage.
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Inventors:
LI JIANPING (CN)
Application Number:
PCT/CN2022/128140
Publication Date:
May 02, 2024
Filing Date:
October 28, 2022
Export Citation:
Assignee:
YANGTZE ADVANCED MEMORY IND INNOVATION CENTER CO LTD (CN)
International Classes:
G11C7/10; G11C16/08; G11C16/26
Foreign References:
| CN114974377A | 2022-08-30 | |||
| US20050041520A1 | 2005-02-24 | |||
| CN114255795A | 2022-03-29 | |||
| US7440316B1 | 2008-10-21 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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