Title:
MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/164487
Kind Code:
A1
Abstract:
A memory device according to the present invention comprises: a substrate; a coupling layer having electrical conductivity and located on the substrate; a meta-atomic layer located above or below the coupling layer; a memory layer located above the meta-atomic layer; and an electrode layer located on the memory layer and having electrical conductivity, wherein the memory layer is made of a material forming spontaneous polarization at a predetermined voltage or higher. Therefore, the memory device can be electrically driven and continuously maintain modulated optical characteristics. In addition, the optical characteristics of the memory device according to the present invention can be modulated by multiple electrical inputs.
Inventors:
MIN BUM KI (KR)
KIM WOO YOUNG (KR)
KIM HYEON DON (KR)
KIM TEUN TEUN (KR)
LEE SEUNG HOON (KR)
KIM WOO YOUNG (KR)
KIM HYEON DON (KR)
KIM TEUN TEUN (KR)
LEE SEUNG HOON (KR)
Application Number:
PCT/KR2016/014591
Publication Date:
September 28, 2017
Filing Date:
December 13, 2016
Export Citation:
Assignee:
KOREA ADVANCED INST SCI & TECH (KR)
International Classes:
H01L45/00
Other References:
LEE, SEUNG HOON ET AL.: "Switching Teraherz Waves with Gate-controlled Active Graphene Metamaterials", NATURE MATERIALS, vol. 11, 30 September 2012 (2012-09-30), pages 936 - 941, XP055341792
DRISCOLL, TOM ET AL.: "Memory Metamaterials", SCIENCE, vol. 325, no. 5947, 18 September 2009 (2009-09-18), pages 1518 - 1521, XP055425139
SHIMADA, TAKAHIRO ET AL.: "Hierarchical Ferroelectric and Ferrotoroidic Polarizations Coexistent in Nano-metamaterials", SCIENTIFIC REPORTS, vol. 5, no. 1, 1 October 2015 (2015-10-01), pages 1 - 8, XP055425144
PAIK, TAEJONG ET AL.: "Solution-Processed Phase-Change VO2 Metamaterials from Colloidal Vanadium Oxide (VOx) Nanocrystals", vol. 8, no. 1, 28 January 2014 (2014-01-28), pages 797 - 806, XP055425152
BALCI, OSMAN ET AL.: "Electrically Switchable Metadevices", MATERIALS SCIENCE, 27 December 2015 (2015-12-27), pages 1 - 18, XP055425156
KIM, WOO YOUNG ET AL.: "Graphene-ferroelectric Metadevices for Nonvolatile Memory and Reconfigurable Logic-gate Operations", NATURE COMMUNICATIONS, vol. 7, 27 January 2016 (2016-01-27), pages 1 - 6, XP055425160
DRISCOLL, TOM ET AL.: "Memory Metamaterials", SCIENCE, vol. 325, no. 5947, 18 September 2009 (2009-09-18), pages 1518 - 1521, XP055425139
SHIMADA, TAKAHIRO ET AL.: "Hierarchical Ferroelectric and Ferrotoroidic Polarizations Coexistent in Nano-metamaterials", SCIENTIFIC REPORTS, vol. 5, no. 1, 1 October 2015 (2015-10-01), pages 1 - 8, XP055425144
PAIK, TAEJONG ET AL.: "Solution-Processed Phase-Change VO2 Metamaterials from Colloidal Vanadium Oxide (VOx) Nanocrystals", vol. 8, no. 1, 28 January 2014 (2014-01-28), pages 797 - 806, XP055425152
BALCI, OSMAN ET AL.: "Electrically Switchable Metadevices", MATERIALS SCIENCE, 27 December 2015 (2015-12-27), pages 1 - 18, XP055425156
KIM, WOO YOUNG ET AL.: "Graphene-ferroelectric Metadevices for Nonvolatile Memory and Reconfigurable Logic-gate Operations", NATURE COMMUNICATIONS, vol. 7, 27 January 2016 (2016-01-27), pages 1 - 6, XP055425160
Attorney, Agent or Firm:
SON, Jae Yong (KR)
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