Title:
MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/213968
Kind Code:
A1
Abstract:
A memory device is disclosed. According to an embodiment, the memory device may be implemented as a bidirectional two-terminal phase-change memory device which adaptively determines a depletion layer, or may be implemented as a crosspoint array structured to include an air gap so as to resolve parasitic capacitance problems.
Inventors:
SONG YUN HEUB (KR)
Application Number:
PCT/KR2020/005132
Publication Date:
October 22, 2020
Filing Date:
April 17, 2020
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD (KR)
International Classes:
H01L45/00
Domestic Patent References:
| WO2013003856A2 | 2013-01-03 |
Foreign References:
| KR20110074354A | 2011-06-30 | |||
| KR20180133771A | 2018-12-17 | |||
| KR20150090472A | 2015-08-06 | |||
| KR20120020552A | 2012-03-08 |
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
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