Title:
MEMORY AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/165283
Kind Code:
A1
Abstract:
Provided in the embodiments of the present application are a memory having a tunneling field effect transistor (TFET), and an electronic device comprising the memory which has the TFET. The present application relates to the technical field of memories. Not only can a low-power-consumption operation be realized, but also the use reliability of the memory can be improved. The memory comprises a substrate having a first doping region and a second doping region, which have the same doping type, wherein the substrate is provided with a storage unit, the storage unit not only comprises a storage portion, but also comprises a gating tube and a TFET, which are located on two sides of the storage portion, and a control gate of the storage portion insulated from a control gate of the TFET, and the control gate of the storage portion is insulated from a control gate of the gating tube. In this way, the probability of a gate dielectric layer of a storage unit being broken down can be reduced, thereby improving the use reliability and durability of a memory.
Inventors:
JIAO HUIFANG (CN)
WANG JINGYUANZHANG (CN)
FAN LUMING (CN)
SUN QINGQING (CN)
LI XIANGHUI (CN)
WANG JINGYUANZHANG (CN)
FAN LUMING (CN)
SUN QINGQING (CN)
LI XIANGHUI (CN)
Application Number:
PCT/CN2023/072818
Publication Date:
September 07, 2023
Filing Date:
January 18, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L27/105; H01L29/739; H01L29/788
Foreign References:
| CN108417575A | 2018-08-17 | |||
| CN102339833A | 2012-02-01 | |||
| US20200234769A1 | 2020-07-23 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)
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