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Patent Searching and Data


Title:
MEMORY FAULT RECOVERY METHOD, SYSTEM, AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/020031
Kind Code:
A1
Abstract:
A memory fault recovery method, a system, and a memory. In the present application, a processor locates a first memory cell that is faulty in a memory. Once the first memory cell is isolated or replaced, and when the remaining memory cells in the memory maintain normal operations, the processor may reset the first memory cell. When memory cells in the memory are faulty, once the first faulty memory cell is replaced and isolated, the processor may separately reset the first memory cell without affecting the remaining memory cells in the memory. By means of resetting the first memory cell, the first memory cell is restored to normal, and memory cells that can be used normally are continually in the memory, and can act as redundant memory cells or can continue to be used. The probability of system downtime caused by the replacement of non-redundant memory cells due to memory failure can be reduced to a great extent, and instances of replacing hardware or powering on again can be effectively reduced.

Inventors:
DIAO YANGBIN (CN)
YUAN LEI (CN)
CHEN HUA (CN)
LIANG YONGGUI (CN)
Application Number:
PCT/CN2022/092017
Publication Date:
February 23, 2023
Filing Date:
May 10, 2022
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G06F11/07
Domestic Patent References:
WO2021120664A12021-06-24
Foreign References:
CN111506460A2020-08-07
CN113835923A2021-12-24
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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