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Title:
MEMORY AND FORMING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/088430
Kind Code:
A1
Abstract:
A memory and a forming method therefor. The forming method comprises: providing a substrate; forming a first mask layer on the substrate, wherein a plurality of elongated patterns which are arranged in parallel and are located above an array area are formed in the first mask layer, and end portions of the elongated patterns are connected to the first mask layer on a peripheral area of the substrate; forming a second mask layer on the first mask layer, wherein a plurality of first patterns are formed in the second mask layer, and the plurality of first patterns are arranged in an array and overlap with the elongated patterns, thereby forming dividing grooves in the substrate to divide a continuous active area into a plurality of discrete active areas; and performing layer-by-layer etching on the second mask layer and the first mask layer as masks, transferring the elongated patterns and the first patterns into the substrate, and forming the discrete active areas arranged in an array, wherein one end of the discrete active area located at the edge of the array area is connected to the peripheral area of the substrate. The memory formed by the method has high reliability.

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Inventors:
ZHANG QIANG (CN)
YING ZHAN (CN)
Application Number:
PCT/CN2020/104961
Publication Date:
May 14, 2021
Filing Date:
July 27, 2020
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8239; H01L21/308; H01L27/105
Foreign References:
CN107818980A2018-03-20
CN107818980A2018-03-20
CN207503954U2018-06-15
CN210607188U2020-05-22
US20160233297A12016-08-11
US20120171867A12012-07-05
CN1617327A2005-05-18
Other References:
See also references of EP 3933893A4
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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