Title:
MEMORY AND FORMING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/168778
Kind Code:
A1
Abstract:
The present disclosure relates to a memory and a forming method therefor. The forming method for the memory comprises the following steps: providing an initial substrate; etching the initial substrate to form a plurality of capacitor holes, and a plurality of trenches which are in one-to-one communication with the plurality of capacitor holes and are located below the capacitor holes; forming an isolation layer which communicates with the adjacent trenches and fully fills the trenches, the initial substrate remaining below the isolation layer being used as a substrate; and forming capacitors in the capacitor holes. The present disclosure reduces or even avoids the problem that electric leakage is liable to occur to the bottoms of the capacitors, so that the electrical performance of the memory is improved.
Inventors:
XIAO DEYUAN (CN)
SHAO GUANGSU (CN)
SHAO GUANGSU (CN)
Application Number:
PCT/CN2022/086255
Publication Date:
September 14, 2023
Filing Date:
April 12, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/64
Foreign References:
| CN112018089A | 2020-12-01 | |||
| CN113659075A | 2021-11-16 | |||
| CN112420722A | 2021-02-26 | |||
| CN112908968A | 2021-06-04 | |||
| CN112750783A | 2021-05-04 | |||
| CN114068539A | 2022-02-18 | |||
| JP2011108927A | 2011-06-02 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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