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Patent Searching and Data


Title:
MEMORY AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/184707
Kind Code:
A1
Abstract:
Embodiments of the present invention provide a memory and a manufacturing method therefor, and an electronic device. The memory comprises a substrate, and a word line, a bit line and a storage unit on one side of the substrate. The storage unit comprises a transistor. The transistor comprises: a semiconductor layer which comprises a source contact region, a semiconductor region, and a drain contact region which are sequentially connected; a main gate electrically connected to the word line; a source electrically connected to the bit line and the source contact region of the semiconductor layer, respectively; a drain electrically connected to the drain contact region of the semiconductor layer; and an auxiliary gate electrically connected to the drain. The orthographic projection of the main gate on the substrate and the orthographic projection of the auxiliary gate on the substrate at least partially overlap with the orthographic projection of the semiconductor region of the semiconductor layer on the substrate. According to the present invention, on the basis that the transistor has the main gate, the auxiliary gate electrically connected to the drain is introduced, the auxiliary gate can obtain a fixed potential synchronous with the drain, and provide supplement control for the semiconductor layer by utilizing the fixed potential, thereby optimizing the read-write performance of the memory.

Inventors:
ZHU ZHENGYONG (CN)
KANG BOKMOON (CN)
WANG GUILEI (CN)
ZHAO CHAO (CN)
Application Number:
PCT/CN2022/097706
Publication Date:
October 05, 2023
Filing Date:
June 08, 2022
Export Citation:
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Assignee:
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
International Classes:
G11C11/407
Foreign References:
CN114863970A2022-08-05
US6069819A2000-05-30
CN104681631A2015-06-03
CN1855505A2006-11-01
US20180315769A12018-11-01
Attorney, Agent or Firm:
LIFANG & PARTNERS (CN)
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