Title:
MEMORY, SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/231067
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductors, and relates to a memory, a semiconductor structure and a forming method therefor. The forming method of the present disclosure comprises: providing a substrate, the substrate comprising a plurality of conductive contact plugs distributed in an array and an insulating layer separating each conductive contact plug; and forming, on the surface of the substrate, a plurality of capacitor layers that are stacked and distributed in a direction perpendicular to the substrate, each capacitor layer comprising a plurality of capacitors distributed at intervals, and the capacitors being respectively connected to different conductive contact plugs. According to the forming method of the present disclosure, the storage capacity of the capacitors can be improved, and the product yield is improved.
Inventors:
LU JINGWEN (CN)
Application Number:
PCT/CN2022/097961
Publication Date:
December 07, 2023
Filing Date:
June 09, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242; H01L27/108
Foreign References:
| CN102237364A | 2011-11-09 | |||
| CN114188281A | 2022-03-15 | |||
| CN107634047A | 2018-01-26 | |||
| CN107968044A | 2018-04-27 | |||
| US10629675B1 | 2020-04-21 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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