Title:
MEMORY WITH IMPROVED CROSS TEMPERATURE RELIABILITY AND READ PERFORMANCE
Document Type and Number:
WIPO Patent Application WO/2020/133199
Kind Code:
A1
Abstract:
A memory device comprises a memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.
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Inventors:
WU JINGXUN ERIC (CN)
ZHU YINGYING (CN)
YANG HUI (CN)
ZHOU BO (CN)
TAN HUA (CN)
ZHU YINGYING (CN)
YANG HUI (CN)
ZHOU BO (CN)
TAN HUA (CN)
Application Number:
PCT/CN2018/124807
Publication Date:
July 02, 2020
Filing Date:
December 28, 2018
Export Citation:
Assignee:
MICRON TECHNOLOGY INC (US)
International Classes:
G11C11/417
Foreign References:
| CN1892904A | 2007-01-10 |
Attorney, Agent or Firm:
LEE AND LI - LEAVEN IPR AGENCY LTD. (CN)
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