Title:
MEMORY WITH UNIFORM READ AND VERIFICATION THRESHOLD
Document Type and Number:
WIPO Patent Application WO2004102580
Kind Code:
A3
Abstract:
A plurality of cells in a flash memory device are coupled together in a series configuration, as in a NAND flash memory. A position of a first accessed cell is determined with reference to a ground potential in the flash memory device. A first word line signal is coupled to the first accessed cell. The first word line signal voltage level is adjusted in response to the position of the first accessed cell in its series of cells.
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Inventors:
ROOHPARVAR FRANKIE (US)
Application Number:
PCT/US2004/014248
Publication Date:
March 24, 2005
Filing Date:
May 07, 2004
Export Citation:
Assignee:
MICRON TECHNOLOGY INC (US)
ROOHPARVAR FRANKIE (US)
ROOHPARVAR FRANKIE (US)
International Classes:
G11C16/04; G11C16/08; (IPC1-7): G11C16/04; G11C16/08
Foreign References:
| US5673223A | 1997-09-30 | |||
| US6021083A | 2000-02-01 | |||
| US20020159315A1 | 2002-10-31 |
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