MEMS DEVICE AND PRODUCTION METHOD FOR SAME

WIPO Patent Application WO/2011/129351

A1

Disclosed is a MEMS device production method which enables easy manufacture of a structure wherein a substrate surface and a vibration member lower surface face each other with a sufficiently narrow gap in between. The MEMS device production method includes: a step (S1) wherein an SOI substrate is prepared; a step (S2) wherein a first silicone layer is patterned and an outer frame section, a raising and facing section, and a supporting beam section, which connects at least three positions on the raising and facing section and the outer frame section, are formed; a step (S3) wherein a state of separation between the raising and facing section and a second silicon layer is created by etching off an intermediate insulating layer positioned between the raising and facing section and the second silicone layer; a step (S4) wherein substrate is collectively pasted to the outer frame section and the raising and facing section; and a step (S5) wherein a floating structure is formed by patterning the second silicon layer and the supporting beam section is divided to isolate the raising and facing section.

SUZUKI KENICHIRO (JP)
TAMANO AKIMASA (JP)
OKADA MITSUHIRO (JP)
KISO MASAYA (JP)

PCT/JP2011/059137

October 20, 2011

April 13, 2011

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SANYO ELECTRIC CO (JP)
RITUMEIKAN TRUST (JP)
SUZUKI KENICHIRO (JP)
TAMANO AKIMASA (JP)
OKADA MITSUHIRO (JP)
KISO MASAYA (JP)

H03H3/007; B81B3/00; B81C1/00; H03H9/24

WO2009110442A1

2009-09-11

JP2009212888A	2009-09-17
JP2006231489A	2006-09-07

Hiroshi Sumiya (JP)
KADOYA HIROSHI (JP)

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