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Title:
MEMS DIFFERENTIAL PRESSURE SENSOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/247277
Kind Code:
A1
Abstract:
A MEMS differential pressure sensor and a manufacturing method therefor. The MEMS differential pressure sensor comprises: a base layer (1) having a cavity (5); a pressure sensitive film (4) erected above the cavity (5) of the base layer (1); and a protective housing (3) arranged on the side of the pressure sensitive film (4) that is away from the base layer (1). In a static state, a vertical distance between the pressure sensitive film (4) and the bottom of the cavity (5), and between the pressure sensitive film (4) and the protective housing (3) is less than the minimum overload deformation amount of the pressure sensitive film (4); and limiting structures, for limiting two sides of the pressure sensitive film (4), are respectively formed by the bottom of the cavity (5) and the protective housing (3). Bidirectional high-overload resistance of the MEMS differential pressure sensor can thus be achieved, and the sensor is stable in performance and small in size.

Inventors:
CHEN LEI (CN)
ZHU ENCHENG (CN)
ZHANG QIANG (CN)
YAN WENMING (CN)
Application Number:
PCT/CN2021/143207
Publication Date:
December 01, 2022
Filing Date:
December 30, 2021
Export Citation:
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Assignee:
GOERTEK MICROELECTRONICS INC (CN)
International Classes:
G01L13/02; G01L7/08
Foreign References:
DE3148403A11983-06-16
CN1392399A2003-01-22
CN108760100A2018-11-06
CN113432778A2021-09-24
DE102018104162A12019-08-29
US20090151464A12009-06-18
US20140144243A12014-05-29
US20150047435A12015-02-19
CN103308239A2013-09-18
Attorney, Agent or Firm:
GRANDER IP LAW FIRM (CN)
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