Title:
MEMS STRUCTURE, ELECTROSTATIC CAPACITANCE TYPE SENSOR HAVING MEMS STRUCTURE, PIEZOELECTRIC SENSOR, AND ACOUSTIC SENSOR
Document Type and Number:
WIPO Patent Application WO/2018/008181
Kind Code:
A1
Abstract:
The present invention relates to an electrostatic capacitance type sensor manufactured using MEMS technology, and provides a technique which enables a high SN ratio to be obtained, and which enables an increase in resistance to input pressure. An electrostatic capacitance type sensor which converts a displacement of a diaphragm into a change in an electrostatic capacitance between the diaphragm and a back plate is configured in such a way that part of the external shape of the diaphragm is disposed inward of an opening in a base plate, when seen in a normal line direction, and another part of the external shape of the diaphragm is disposed outward of the opening in the base plate, when seen in the normal line direction.
Inventors:
MURAKAMI AYUMU (JP)
INOUE TADASHI (JP)
HORIMOTO YASUHIRO (JP)
INOUE TADASHI (JP)
HORIMOTO YASUHIRO (JP)
Application Number:
PCT/JP2017/006396
Publication Date:
January 11, 2018
Filing Date:
February 21, 2017
Export Citation:
Assignee:
OMRON TATEISI ELECTRONICS CO (JP)
International Classes:
H04R7/04; B81B3/00; H01L29/84; H04R1/02; H04R7/22; H04R17/02; H04R19/04
Foreign References:
| JP2011239324A | 2011-11-24 | |||
| US20130089224A1 | 2013-04-11 |
Attorney, Agent or Firm:
SERA, Kazunobu et al. (JP)
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