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Title:
METAL CATION-MODIFIED BLACK PHOSPHORUS-BASED SYNAPSE DEVICE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/200790
Kind Code:
A1
Abstract:
A metal cation-modified black phosphorus-based synapse device, comprising a back gate electrode (1) as a synaptic front end; an isolation layer (2) and a functional layer (3) sequentially disposed on the back gate electrode (1); and a first electrode (4) as a reference electrode and a second electrode (5) as a synaptic rear end disposed on the functional layer (3) with a space therebetween. A portion of the functional layer (3) is exposed by a channel structure formed between the first electrode (4) and the second electrode (5). The material of the functional layer (3) comprises a metal cation-modified black phosphorous flake. The metal cation-modified black phosphorus-based synapse device has good environmental stability and excellent synaptic performance, and provides an important component support with high practical value for brain-like computation. The method for preparing the metal cation-modified black phosphorus-based synapse device is simple and easy to operate.

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Inventors:
ZHANG HAN (CN)
WANG HUIDE (CN)
GUO ZHINAN (CN)
Application Number:
PCT/CN2018/101415
Publication Date:
October 24, 2019
Filing Date:
August 21, 2018
Export Citation:
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Assignee:
ZHANG HAN (CN)
International Classes:
H01L29/78; B82Y10/00
Foreign References:
CN104966778A2015-10-07
CN105742394A2016-07-06
CN106185848A2016-12-07
CN106653850A2017-05-10
Other References:
GUO, ZHINAN ET AL.: "Metal-Ion-Modified Black Phosphorus with Enhanced Stability and Transistor Performance", ADVANCED MATERIALS, vol. 29, no. 42, 28 September 2017 (2017-09-28), pages 1 - 8, XP055644379
CHEN, YAN ET AL.: "Emulations of . Synaptic Plasticity in the Planar Transistor Configuration for Neuromorphic Computing", CHINESE SCIENCE BULLETIN, vol. 62, no. 28-29, 20 October 2017 (2017-10-20), pages 3321 - 3328, XP055644382
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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