Title:
METAL INDUCED NANOCRYSTALLIZATION OF AMORPHOUS SEMICONDUCTOR QUANTUM DOTS
Document Type and Number:
WIPO Patent Application WO/2014/141662
Kind Code:
A1
Abstract:
A method of forming crystallized semiconductor particles includes: forming amorphous semiconductor particles in a vacuumed aggregation chamber; transporting the amorphous semiconductor particles formed in the vacuumed aggregation chamber to a vacuumed deposition chamber within which a substrate is held; and applying a vapor of a metal catalyst to the amorphous semiconductor particles while still in transit to the substrate in the vacuumed deposition chamber to induce crystallization of at least portion of the amorphous semiconductor particles via the metal catalyst in the transit, thereby depositing the crystallized semiconductor particles with the metal catalyst attached thereto onto the substrate.
Inventors:
VIDYA DHAR SINGH (JP)
CASSIDY CATHAL (JP)
SOWWAN MUKHLES IBRAHIM (JP)
CASSIDY CATHAL (JP)
SOWWAN MUKHLES IBRAHIM (JP)
Application Number:
PCT/JP2014/001293
Publication Date:
September 18, 2014
Filing Date:
March 07, 2014
Export Citation:
Assignee:
OKINAWA INST OF SCIENCE AND TECHNOLOGY SCHOOL CORP (JP)
International Classes:
H01L21/203; C01B33/02; H01L29/06
Domestic Patent References:
| WO2007049873A1 | 2007-05-03 | |||
| WO2008156892A2 | 2008-12-24 |
Foreign References:
| JP2012232869A | 2012-11-29 |
Other References:
CATHAL CASSIDY ET AL.: "Inoculation of silicon nanoparticles with silver atoms", SCIENTIFIC REPORTS, vol. 3, no. 3083, 30 October 2013 (2013-10-30), pages 1 - 7, XP055284178, DOI: 10.1038/SREP03083
See also references of EP 2973660A4
See also references of EP 2973660A4
Attorney, Agent or Firm:
KATAYAMA, Shuhei (6-1 Kyobashi 1-chome, Chuo-k, Tokyo 31, JP)
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