Title:
METAL-OXIDE–SEMICONDUCTOR (MOS) OPTICAL MODULATOR AND METHOD OF MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/034322
Kind Code:
A1
Abstract:
Provided are: a metal-oxide-semiconductor (MOS) optical modulator which has high modulation efficiency; and a method of manufacturing the same. In this MOS optical modulator (22), a SiO2 layer (31), a Si layer (32), a gate insulation film (33), and a gate layer (34), etc., are laminated on a silicon substrate (11). A rib (32a) is provided and a rib-type optical waveguide (21) is formed on the surface of the Si layer (32). The Si layer (32) is an n-type doped semiconductor including the rib (32a). The gate layer (34) is obtained by laminating a first layer (34a) formed from InGaAsP and a second layer (34b) formed from InP. The first layer (34a) and the second layer (34b) are n-type doped semiconductors. The MOS optical modulator (22) has a refractive index which varies with a density change of electrons accumulated on an interface between the gate insulation film (33) and the gate layer (34).
Inventors:
TAKENAKA MITSURU (JP)
HAN JAE HOON (JP)
TAKAGI SHINICHI (JP)
HAN JAE HOON (JP)
TAKAGI SHINICHI (JP)
Application Number:
PCT/JP2017/029548
Publication Date:
February 22, 2018
Filing Date:
August 17, 2017
Export Citation:
Assignee:
UNIV TOKYO (JP)
International Classes:
G02F1/025; G02F1/01
Domestic Patent References:
| WO2011037686A1 | 2011-03-31 |
Foreign References:
| JP2013214044A | 2013-10-17 | |||
| JP2014126728A | 2014-07-07 | |||
| JP2013238657A | 2013-11-28 |
Other References:
J . FUJIKATA ET AL.: "High-speed and high-efficiency Si optical modulator with MOS junction, using solid-phase crystallization of polycrystalline silicon", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, 14 March 2016 (2016-03-14), pages 042202 - 1 - 042202-6, XP055464760
J.-H.HAN ET AL.: "Extremely high modulation efficiency III-V/Si hybrid MOS optical modulator fabricated by direct wafer bonding", ELECTRON DIVICES MEETING (IEDM, 3 December 2016 (2016-12-03), pages 620 - 623, XP033055040
J.-H.HAN ET AL.: "Extremely high modulation efficiency III-V/Si hybrid MOS optical modulator fabricated by direct wafer bonding", ELECTRON DIVICES MEETING (IEDM, 3 December 2016 (2016-12-03), pages 620 - 623, XP033055040
Attorney, Agent or Firm:
YOSHIDA Tadanori (JP)
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