Title:
METAL NITRIDE MATERIAL FOR THERMISTORS, METHOD FOR PRODUCING SAME, AND FILM-TYPE THERMISTOR SENSOR
Document Type and Number:
WIPO Patent Application WO/2014/196583
Kind Code:
A1
Abstract:
Provided are: a metal nitride material for thermistors that has high heat resistance, is highly reliable, and can be formed into a film directly on, e.g., a film without firing; a method for producing said metal nitride material; and a film-type thermistor sensor. This metal nitride material used for thermistors is made of a metal nitride represented by the general formula (M1-vVv)xAly(N1-wOw)z (wherein 0.0 < v < 1.0, 0.70 ≤ y/(x+y) ≤ 0.98, 0.45 ≤ z ≤ 0.55, 0 < w ≤ 0.35, and x+y+z = 1), and has a single-phase wurtzite hexagonal crystal structure, wherein said M is Ti and/or Cr. This method for producing said metal nitride material for thermistors comprises a film formation step for forming a film by performing reactive sputtering in a nitrogen- and oxygen-containing atmosphere by using an M-V-Al alloy sputtering target, wherein said M is Ti and/or Cr.
Inventors:
FUJITA TOSHIAKI (JP)
TANAKA HIROSHI (JP)
NAGATOMO NORIAKI (JP)
TANAKA HIROSHI (JP)
NAGATOMO NORIAKI (JP)
Application Number:
PCT/JP2014/064894
Publication Date:
December 11, 2014
Filing Date:
May 28, 2014
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
H01C7/04; C01G31/00; C23C14/06; C23C14/34; C30B29/38; G01K7/22; H01C17/12
Foreign References:
| JPH10270201A | 1998-10-09 | |||
| JP2008251611A | 2008-10-16 | |||
| JPH06158272A | 1994-06-07 | |||
| JPS6396262A | 1988-04-27 | |||
| JPH0590011A | 1993-04-09 |
Attorney, Agent or Firm:
TAKAOKA, Ryoichi (JP)
Ryoichi Takaoka (JP)
Ryoichi Takaoka (JP)
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