Title:
METAL OXIDE, METHOD FOR FORMING METAL OXIDE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/254910
Kind Code:
A1
Abstract:
Provided is a novel metal oxide. A metal oxide containing a c-axis-oriented crystal. The metal oxide comprises indium, an element M (wherein M represents gallium, aluminum, yttrium or tin) and zinc. The diffusion length of hydrogen in the metal oxide is 200 nm or less. In the metal oxide, the absorption by a localized level measured by CPM is 0.01 /cm or less. The diffusion length of hydrogen is calculated under the conditions of a temperature of 400℃ and 1 hour.
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Inventors:
YAMAZAKI SHUNPEI (JP)
KOMATSU YOSHIHIRO (JP)
SAWAI HIROMI (JP)
WATANABE RYOSUKE (JP)
KAWAGUCHI SHINOBU (JP)
ITO SHUNICHI (JP)
KOMATSU YOSHIHIRO (JP)
SAWAI HIROMI (JP)
WATANABE RYOSUKE (JP)
KAWAGUCHI SHINOBU (JP)
ITO SHUNICHI (JP)
Application Number:
PCT/IB2020/055353
Publication Date:
December 24, 2020
Filing Date:
June 08, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
C30B29/22; C30B23/08; C30B33/02; C30B33/08; H01L21/336; H01L29/786
Foreign References:
| JP2013145876A | 2013-07-25 | |||
| JP2014045178A | 2014-03-13 | |||
| JP2014158018A | 2014-08-28 |
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