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Title:
METAL OXIDE AND SEMICONDUCTOR DEVICE HAVING SAME
Document Type and Number:
WIPO Patent Application WO/2019/021121
Kind Code:
A1
Abstract:
Provided are a metal oxide and a semiconductor having the metal oxide. A crystalline metal oxide having In, an element M, and Zn, wherein the element M can have two or more valences, the atomic ratio of the element M to Zn is 1 or greater, and the atomic ratio of In to the element M is greater than 1. The metal oxide also has a microcrystal region or a region having a c-axis orientation. The element M is Sn, Ti, V, Fe, Co, or Ni. The present invention is also a semiconductor device having the metal oxide.

Inventors:
MATSUDA SHINPEI
HONDA RYUNOSUKE (JP)
KANEMURA HIROSHI (JP)
Application Number:
PCT/IB2018/055365
Publication Date:
January 31, 2019
Filing Date:
July 19, 2018
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
C01G15/00; C01G19/00; C23C14/08; H01L21/363; H01L29/786
Foreign References:
JP2017514885A2017-06-08
Other References:
NI, J. ET AL.: "MOCVD-Derived Highly Transparent, Conductive Zinc-and Tin-Doped Indium Oxide Thin Films: Precursor Synthesis, Metastable Phase Film Growth and Characterization, and Application as Anodes in Polymer Light-Emitting Diodes", J. AM. CHEM. SOC., vol. 127, no. 15, 23 March 2005 (2005-03-23), pages 5613 - 5624, XP055568229, Retrieved from the Internet
WANG, B. ET AL.: "Solution-Processed All-Oxide Transparent High-Performance Transistors Fabricated by Spray-Combustion Synthesis", ADV. ELECTRON. MATER., vol. 2, no. 4, 28 January 2016 (2016-01-28), pages 1500427, XP055568236, Retrieved from the Internet
BROWN, F. ET AL.: "New Compounds ln3Ti2AO10, ln6Ti6BO22, and Their Solid Solutions (A: Al, Cr, Mn, Fe, or Ga; B: Mg, Mn, Co, Ni, Cu, or Zn): Synthesis and Crystal Structures", JOURNAL OF SOLID STATE CHEMISTRY, vol. 147, 1999, pages 438 - 449, XP055568239
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