Title:
METAL OXIDE THIN FILM TRANSISTOR, AND ARRAY SUBSTRATE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/092562
Kind Code:
A1
Abstract:
The present application relates to the technical field of display, and provides a metal oxide thin film transistor, and an array substrate and a preparation method therefor. The array substrate comprises a substrate, and a drive transistor and a switch transistor located on the substrate; the drive transistor comprises a semiconductor layer; the switch transistor comprises an active layer and a protective layer, wherein the active layer comprises two opposite main surfaces and a side surface located between outer contours of the two main surfaces, the protective layer is located on the main surface of the active layer away from the substrate and covers the main surfaces and the side surface, the protective layer and the semiconductor layer are provided on a same layer and made of a same metal oxide semiconductor material, and the carrier mobility of the protective layer is less than that of the active layer. An abnormality of a drive circuit in the array substrate caused by poor stability of the drive transistor is avoided, such that the difficulty of the preparation process of the array substrate is reduced. The active layer is protected by means of the protective layer, such that the stability of the switch transistor is further improved.
Inventors:
WANG DONGFANG (CN)
WANG LIZHONG (CN)
NING CE (CN)
WANG LIZHONG (CN)
NING CE (CN)
Application Number:
PCT/CN2021/134039
Publication Date:
June 01, 2023
Filing Date:
November 29, 2021
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L29/786; H01L21/336; H01L27/12
Foreign References:
| US20170309649A1 | 2017-10-26 | |||
| CN103477441A | 2013-12-25 | |||
| CN104300007A | 2015-01-21 | |||
| CN110010626A | 2019-07-12 | |||
| CN109786468A | 2019-05-21 |
Attorney, Agent or Firm:
BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)
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