Title:
METAL OXIDE THIN FILM TRANSISTOR AND DISPLAY PANEL
Document Type and Number:
WIPO Patent Application WO/2023/184351
Kind Code:
A1
Abstract:
Embodiments of the present disclosure provide a metal oxide thin film transistor. The metal oxide thin film transistor comprises a metal oxide semiconductor layer (102) arranged on a base substrate (101), and a source electrode (103) and a drain electrode (104) that are in contact with the metal oxide semiconductor layer (102); the metal oxide semiconductor layer (102) is of a stacked structure, the stacked structure at least comprises a first semiconductor layer (1021) and a second semiconductor layer (1022), and the carrier mobility of the first semiconductor layer (1021) is higher than the carrier mobility of the second semiconductor layer (1022); the metal oxide semiconductor layer (102) comprises a lower surface (102a), an upper surface (102b), and side surfaces (102c); the source electrode (103) is in contact with one side surface (102c) and the upper surface (102b); a region where the side surface (102c) is in contact with the source electrode (103) or the drain electrode (104) at least comprises a first contact region (105) located in the first semiconductor layer (1021), and a second contact region (106) located in the second semiconductor layer (1022); the first contact region (105) and the second contact region (106) in the metal oxide semiconductor layer (102) have the following shape: a shape having a first angle formed between the lower surface (102a) of the metal oxide semiconductor layer (102) and the side surface (102c) of the first contact region (105), and a second angle formed between the lower surface (102a) of the metal oxide semiconductor layer (102) and the side surface (102c) of the second contact region (106); and the first angle is greater than the second angle. The first angle is greater than the second angle, so that the area of the side surface of a film layer having high carrier mobility is as small as possible, and the defect of a side channel region is as small as possible.
Inventors:
XUE DAPENG (CN)
WANG LIZHONG (CN)
DONG SHUILANG (CN)
HU HEHE (CN)
YAO NIANQI (CN)
YUAN GUANGCAI (CN)
NING CE (CN)
LI ZHENGLIANG (CN)
WANG DONGFANG (CN)
LEI LIPING (CN)
XU CHEN (CN)
HUANG JIE (CN)
WANG LIZHONG (CN)
DONG SHUILANG (CN)
HU HEHE (CN)
YAO NIANQI (CN)
YUAN GUANGCAI (CN)
NING CE (CN)
LI ZHENGLIANG (CN)
WANG DONGFANG (CN)
LEI LIPING (CN)
XU CHEN (CN)
HUANG JIE (CN)
Application Number:
PCT/CN2022/084443
Publication Date:
October 05, 2023
Filing Date:
March 31, 2022
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L29/786; H01L27/12; H01L29/06
Domestic Patent References:
| WO2021258982A1 | 2021-12-30 |
Foreign References:
| CN103824886A | 2014-05-28 | |||
| CN102856389A | 2013-01-02 | |||
| CN112750913A | 2021-05-04 | |||
| CN110246900A | 2019-09-17 | |||
| US20190326443A1 | 2019-10-24 |
Attorney, Agent or Firm:
LIU, SHEN & ASSOCIATES (CN)
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