METALLIC SPUTTERING TARGET, PRODUCTION METHOD THEREFOR, AND METALLIC MATERIAL AND PRODUCTION METHOD THEREFOR

Title:

METALLIC SPUTTERING TARGET, PRODUCTION METHOD THEREFOR, AND METALLIC MATERIAL AND PRODUCTION METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2023/224084

Kind Code:

A1

Abstract:

Provided is at least any of a metallic material which includes a metal having a body-centered cubic structure and is suitable for use as a sputtering target, a method for producing the metallic material, a sputtering target including the metallic material, and a method for producing a film using the sputtering target.　The metallic material includes a metal which has a body-centered cubic structure and in which the ratio of the areal proportion of the orientation plane {111} to the total areal proportion of the orientation planes {001}, {101}, and {111} is 0.45 or greater.

More Like This:

JPH07258826	PRODUCTION OF THIN FILM SEMICONDUCTOR DEVICE
WO/2019/134394	OXIDE SEMICONDUCTOR COMPOSITION, MANUFACTURING METHOD THEREOF, THIN FILM TRANSISTOR AND DISPLAY APPARATUS
JPH01188446	HEAT RAY REFLECTIVE TRANSPARENT BODY

Inventors:

SHONO DAIKI (JP)
MESUDA MASAMI (JP)
KONDO TAIGA (JP)

Application Number:

PCT/JP2023/018537

Publication Date:

November 23, 2023

Filing Date:

May 18, 2023

Export Citation:

Click for automatic bibliography generation Help

Assignee:

TOSOH CORP (JP)

International Classes:

C23C14/34; B22F3/15; B22F3/24; C22F1/00; C22F1/11; C22F1/18

Foreign References:

CN110438350A	2019-11-12
JP2009528922A	2009-08-13

Attorney, Agent or Firm:

T.S. PARTNERS et al. (JP)

Download PDF:

View/Download PDF PDF Help

Previous Patent: INFORMATION PROCESSING SYSTEM AND INFORMATION PROCESSING METHOD

Next Patent: INFORMATION PROCESSING SYSTEM AND INFORMATION PROCESSING METHOD