METHOD AND APPARATUS FOR FORMING SILICON OXIDE FILM

Title:

METHOD AND APPARATUS FOR FORMING SILICON OXIDE FILM

Document Type and Number:

WIPO Patent Application WO/2007/136049

Kind Code:

A1

Abstract:

An object to be processed which contains silicon in the surface is introduced in a processing vessel. A plasma of a processing gas containing an oxygen gas and a nitrogen gas is generated within the processing vessel. The silicon in the surface of the object to be processed is oxidized by the plasma, thereby forming a silicon oxide film.

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Inventors:

KABE YOSHIRO (JP)
KITAGAWA JUNICHI (JP)
MURAOKA SUNAO (JP)

Application Number:

PCT/JP2007/060407

Publication Date:

November 29, 2007

Filing Date:

May 22, 2007

Export Citation:

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Assignee:

TOKYO ELECTRON LTD (JP)
KABE YOSHIRO (JP)
KITAGAWA JUNICHI (JP)
MURAOKA SUNAO (JP)

International Classes:

H01L21/316; H01L21/76

Foreign References:

JP2000294550A	2000-10-20
JP2001085427A	2001-03-30

Attorney, Agent or Firm:

TAKAYAMA, Hiroshi (10-8 Akasaka 2-chome,Minato-k, Tokyo 52, JP)

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