Title:
METHOD AND APPARATUS FOR LASER-ANNEALING SEMICONDUCTOR FILM
Document Type and Number:
WIPO Patent Application WO/2010/087299
Kind Code:
A1
Abstract:
Crystallization uniformity is ensured in laser annealing irrespective of fluctuation of laser output. In a laser-annealing method for annealing an amorphous single crystal semiconductor film by irradiating the film with a pulse laser beam, energy of the pulse laser beam is controlled such that the maximum peak height of the pulse waveform of the laser beam is a predetermined height. The control is performed by means of a laser-annealing apparatus provided with: a laser oscillator (1) which outputs the pulse laser beam; an optical system (4) which guides the pulse laser beam to the amorphous single crystal semiconductor film; a maximum peak height measuring section which measures the maximum peak height of the pulse laser beam; and a control section (8) which receives the measurement results from the maximum peak height measuring section and controls the output energy of the pulse laser beam to be outputted from the laser oscillator or controls a variable attenuator (2), which adjusts the attenuation rate of the pulse laser beam, such that the maximum peak height is the predetermined height.
More Like This:
Inventors:
SHIDA JUNICHI (JP)
CHUNG SUGHWAN (JP)
CHUNG SUGHWAN (JP)
Application Number:
PCT/JP2010/050890
Publication Date:
August 05, 2010
Filing Date:
January 25, 2010
Export Citation:
Assignee:
JAPAN STEEL WORKS LTD (JP)
SHIDA JUNICHI (JP)
CHUNG SUGHWAN (JP)
SHIDA JUNICHI (JP)
CHUNG SUGHWAN (JP)
International Classes:
H01L21/20; H01L21/268
Foreign References:
| JPH1012549A | 1998-01-16 | |||
| JP2003163167A | 2003-06-06 | |||
| JP2006278746A | 2006-10-12 |
Attorney, Agent or Firm:
YOKOI Koki (JP)
Koki Yokoi (JP)
Koki Yokoi (JP)
Download PDF: