METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL OF SILICON CARBIDE

Title:

METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL OF SILICON CARBIDE

Document Type and Number:

WIPO Patent Application WO/2001/048277

Kind Code:

A1

Abstract:

A method for producing a single crystal of silicon carbide, characterized in that it comprises reacting a silicon material (22) and a carbon material (3) to generate a gas continuously, and allowing the gas to reach a seed crystal substrate (5) of silicon carbide, to thereby grow a single crystal (6) of silicon carbide on the seed crystal substrate (5). Preferably, the single crystal (6) of silicon carbide is grown while supplying the silicon material (22) continuously onto the carbon material (3) in a reaction crucible (1) and maintaining the temperature of the carbon material (3) at a temperature higher than that at which carbon can react with the silicon in molten state or gasificated state to generate a reaction gas. Also disclosed is an apparatus for carrying out the method which has a reaction crucible (1) and a seed crystal substrate (5) arranged in the reaction crucible (1), and further a means for maintaining the temperature of the carbon material (3) at a temperature higher than that at which carbon can react with the silicon in molten state or gasificated state to generate a reaction gas and a means for supplying the silicon material (22) continuously onto the carbon material (3).

Inventors:

SHIGETO MASASHI
YANO KOTARO
NAGATO NOBUYUKI

Application Number:

PCT/JP2000/009238

Publication Date:

July 05, 2001

Filing Date:

December 26, 2000

Export Citation:

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Assignee:

SHOWA DENKO KK (JP)

International Classes:

C30B23/00; C30B23/02; C30B25/00; (IPC1-7): C30B29/36; C30B23/02; H01L21/205

Foreign References:

JPH06128094A	1994-05-10
JPH06316499A	1994-11-15
JPS4742500A

Other References: