Title:
METHOD FOR ASSEMBLING TWO SUBSTRATES BY MOLECULAR ADHESION AND STRUCTURE OBTAINED BY SUCH A METHOD
Document Type and Number:
WIPO Patent Application WO/2023/202917
Kind Code:
A1
Abstract:
The invention pertains to a method for assembly by molecular adhesion of two substrates each having a main face, at least one of the two substrates bearing a dielectric surface layer on its main face. The method comprises (a) contacting the main faces of the two substrates, then (b) initiating and propagating a bonding wave between the main faces of the two substrates to assemble them with one another. According to the invention, the method comprises, prior to the contacting step, a step of preparing the dielectric surface layer for the purpose of introducing a sulfur dose of more than 3.0 E13 at/cm^2 into this layer. The invention also pertains to a structure obtained via the method.
Inventors:
BROEKAART MARCEL (FR)
LOGIOU MORGANE (FR)
LOGIOU MORGANE (FR)
Application Number:
PCT/EP2023/059486
Publication Date:
October 26, 2023
Filing Date:
April 12, 2023
Export Citation:
Assignee:
SOITEC SILICON ON INSULATOR (FR)
International Classes:
H01L21/762; H01L21/02; H01L21/20; H01L21/18
Domestic Patent References:
| WO2007060145A1 | 2007-05-31 | |||
| WO2013160841A1 | 2013-10-31 |
Foreign References:
| US20060216904A1 | 2006-09-28 | |||
| US5407506A | 1995-04-18 | |||
| US20080171443A1 | 2008-07-17 |
Other References:
DE RIEUTORD ET AL.: "Dynamics of a bonding front", PHYSICAL REVIEW LETTERS, vol. 94, 2005, pages 236101, XP055495602, DOI: 10.1103/PhysRevLett.94.236101
Attorney, Agent or Firm:
IP TRUST (FR)
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