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Title:
METHOD FOR ATOMIC DIFFUSION BONDING AND BONDED STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2021/246245
Kind Code:
A1
Abstract:
Atomic diffusion bonding is carried out using a bonding film comprising a nitride formed at a bonding surface. Operating in a vacuum chamber, a bonding film comprising a nitride is formed on each of flat surfaces of two substrates that each have the flat surface, and, by overlapping the two substrates so the bonding films formed on the two substrates are in contact with each other, the two substrates are joined by the generation of atomic diffusion at a bonding interface between the bonding films.

Inventors:
SHIMATSU TAKEHITO (JP)
UOMOTO MIYUKI (JP)
MIYAMOTO KAZUO (JP)
MIYAMOTO YOSHIKAZU (JP)
KATOH NOBUHIKO (JP)
MORIWAKI TAKAYUKI (JP)
SAITOH TAKAYUKI (JP)
Application Number:
PCT/JP2021/019853
Publication Date:
December 09, 2021
Filing Date:
May 25, 2021
Export Citation:
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Assignee:
UNIV TOHOKU (JP)
CANON ANELVA CORP (JP)
International Classes:
B23K20/00
Foreign References:
JP2012223792A2012-11-15
JP2017022056A2017-01-26
JP2016087664A2016-05-23
JP2005104810A2005-04-21
JP2019162065A2019-09-26
JP5401661B22014-01-29
JP6089162B22017-03-08
JP2014123514A2014-07-03
Other References:
M.P. MASZARAG. GOETZA. CAVIGILAJ. B. MCKITTERICK, J. APPL. PHYS., vol. 64, 1988, pages 4943
Attorney, Agent or Firm:
OGURA & CO. (JP)
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