Title:
METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE, AND PEELING COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2021/193519
Kind Code:
A1
Abstract:
A method for cleaning a semiconductor substrate that includes a step for using a peeling composition to peel off an adhesive layer on a semiconductor substrate, the method being characterised in that: the peeling composition contains a solvent but does not contain a salt; the solvent comprises one or more compounds with a molecular weight of less than 160, selected from aliphatic hydrocarbon compounds, aromatic hydrocarbon compounds, ether compounds, thioether compounds, ester compounds and amine compounds; and the contact angle of the peeling composition on the adhesive layer is less than 31.5 degrees.
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Inventors:
OKUNO TAKAHISA (JP)
YANAI MASAKI (JP)
FUKUDA TAKUYA (JP)
OGATA HIROTO (JP)
MORIYA SHUNSUKE (JP)
OGINO HIROSHI (JP)
SHINJO TETSUYA (JP)
YANAI MASAKI (JP)
FUKUDA TAKUYA (JP)
OGATA HIROTO (JP)
MORIYA SHUNSUKE (JP)
OGINO HIROSHI (JP)
SHINJO TETSUYA (JP)
Application Number:
PCT/JP2021/011678
Publication Date:
September 30, 2021
Filing Date:
March 22, 2021
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
C11D7/50; H01L21/304
Domestic Patent References:
| WO2016152598A1 | 2016-09-29 | |||
| WO2015190438A1 | 2015-12-17 | |||
| WO2014092022A1 | 2014-06-19 |
Foreign References:
| US6818608B2 | 2004-11-16 | |||
| KR20180066550A | 2018-06-19 |
Other References:
See also references of EP 4130224A4
Attorney, Agent or Firm:
KURIHARA, Hiroyuki et al. (JP)
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