Title:
METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE, AND PEELING AND DISSOLVING COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2024/058025
Kind Code:
A1
Abstract:
The present invention provides: a method for cleaning a semiconductor substrate, by which it is possible to remove (clean), in a shorter time and more cleanly by a simple operation, an adhesive layer that is obtained using, for example, a siloxane-based adhesive, from a surface of the semiconductor substrate; a method for producing a processed semiconductor substrate, the method comprising such a cleaning method; and a composition which is used in such a cleaning method. The present invention provides a method for cleaning a semiconductor substrate, the method comprising a step for peeling and dissolving an adhesive layer on a semiconductor substrate with use of a peeling and dissolving composition; and this method for cleaning a semiconductor substrate is characterized in that the peeling and dissolving composition comprises a quaternary ammonium salt (component (I)), an amide-based solvent (component (II)), and a solvent that is represented by formula (G) (component (III)). (In the formula, L11 and L12 each independently represent an alkyl group having 1 to 6 carbon atoms; and the total number of the carbon atoms in the alkyl group represented by L11 and the carbon atoms in the alkyl group represented by L12 is 7 or less.)
Inventors:
YAGYU MASAFUMI (JP)
SHINJO TETSUYA (JP)
SHINJO TETSUYA (JP)
Application Number:
PCT/JP2023/032514
Publication Date:
March 21, 2024
Filing Date:
September 06, 2023
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
H01L21/304; C11D1/62; C11D3/20; C11D3/32; C11D3/43
Domestic Patent References:
| WO2022045026A1 | 2022-03-03 | |||
| WO2021106460A1 | 2021-06-03 | |||
| WO2021100651A1 | 2021-05-27 |
Foreign References:
| JP2021153182A | 2021-09-30 |
Attorney, Agent or Firm:
TAKAOKA Ryoichi et al. (JP)
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