Title:
METHOD FOR CONDUCTIVITY CONTROL OF (AL,IN,GA,B)N
Document Type and Number:
WIPO Patent Application WO2007095137
Kind Code:
A8
Abstract:
A method of controlled p-type conductivity in (Al, In, Ga, B)N semiconductor crystals. Examples include { 1011 } GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
Inventors:
KAEDING JOHN F (US)
SATO HITOSHI (JP)
IZA MICHAEL (US)
ASAMIZU HIROKUNI (US)
ZHONG HONG (US)
DENBAARS STEVEN P (US)
NAKAMURA SHUJI (US)
SATO HITOSHI (JP)
IZA MICHAEL (US)
ASAMIZU HIROKUNI (US)
ZHONG HONG (US)
DENBAARS STEVEN P (US)
NAKAMURA SHUJI (US)
Application Number:
PCT/US2007/003607
Publication Date:
September 18, 2008
Filing Date:
February 09, 2007
Export Citation:
Assignee:
UNIV CALIFORNIA (US)
KAEDING JOHN F (US)
SATO HITOSHI (JP)
IZA MICHAEL (US)
ASAMIZU HIROKUNI (US)
ZHONG HONG (US)
DENBAARS STEVEN P (US)
NAKAMURA SHUJI (US)
KAEDING JOHN F (US)
SATO HITOSHI (JP)
IZA MICHAEL (US)
ASAMIZU HIROKUNI (US)
ZHONG HONG (US)
DENBAARS STEVEN P (US)
NAKAMURA SHUJI (US)
International Classes:
H01L21/04; H01L29/15
Download PDF:
Previous Patent: PERSISTENT STATE SYSTEMS, METHODS AND SOFTWARE
Next Patent: TOOL AND METHOD FOR JOINING SIDELAPPED JOINTS OF DECK PANELS
Next Patent: TOOL AND METHOD FOR JOINING SIDELAPPED JOINTS OF DECK PANELS