Title:
METHOD FOR CONTROLLING SPECIFIC RESISTIVITY AND STRESS OF TUNGSTEN THROUGH PVD SPUTTERING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/249220
Kind Code:
A1
Abstract:
The present invention relates to a method for forming a tungsten (W) film in a semiconductor device, by using a physical vapor deposition (PVD) sputtering method on a semiconductor substrate, the tungsten film forming method comprising: a) a first deposition step of depositing a tungsten film on the semiconductor substrate by using magnetron sputtering with a power density of less than 0.5 W/㎠ ; b) a step of modifying the surface of the deposited tungsten by performing RF bias processing under an inert gas atmosphere; and c) a second deposition step of additionally depositing a tungsten film on the deposited tungsten film by using magnetron sputtering of a power density of 0.5 W/㎠ or more.
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Inventors:
LEE GA YEONG (KR)
KANG HANG (KR)
OH DO HYUN (KR)
NAKANO KATSUAKI (JP)
NUMATA YUKINOBU (JP)
OKUBO TAKU (JP)
KANG HANG (KR)
OH DO HYUN (KR)
NAKANO KATSUAKI (JP)
NUMATA YUKINOBU (JP)
OKUBO TAKU (JP)
Application Number:
PCT/KR2023/004727
Publication Date:
December 28, 2023
Filing Date:
April 07, 2023
Export Citation:
Assignee:
ULVAC INC (JP)
International Classes:
H01L21/285; C23C14/14; C23C14/35; C23C14/58; H01L21/3205; H01L21/321; H01L21/768
Foreign References:
| KR20210125903A | 2021-10-19 | |||
| KR20140014024A | 2014-02-05 | |||
| US20140120700A1 | 2014-05-01 | |||
| KR20160039139A | 2016-04-08 | |||
| KR20140005777A | 2014-01-15 |
Attorney, Agent or Firm:
MUHANN PATENT & LAW FIRM (KR)
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