TECHNICAL FIELD

[0001 ] Embodiments of the present disclosure relate to a deposition of material on a substrate. Embodiments of the present disclosure particularly relate to deposition of material on a substrate by sputtering from rotary targets.

BACKGROUND

[0002] Deposition of material on a substrate has many applications in various technical fields. Sputtering is a method for deposition of a material on a substrate. Sputtering can be associated with a bombardment of the substrate, particularly a film located on the substrate, with energetic particles. The bombardment may have a disadvantageous influence on the properties of a material, particularly a film, located on the substrate. To avoid the bombardment, facing target sputtering (FTS) systems were devised, for example, with planar targets. In an FTS system, instead of facing the substrate directly, the targets face each other. However, the stability of the sputtering plasma in conventional FTS systems is limited. The suitability of conventional FTS systems for use in mass production is impaired. Advanced FTS systems can include rotary targets to increase material utilization. Nonetheless, FTS systems are still generally associated with low deposition rates, leading to low productivity and a risk of substrate surface contamination.

[0003] In view of the above, it is beneficial to provide improved methods and systems for depositing material on a substrate.

SUMMARY

[0004] According to an embodiment, a method of depositing at least one material on a substrate is provided. The method includes a first deposition including: sputtering from a first and a second rotary target through an aperture, the aperture being adjustable and having less than a first size. The first rotary target has a first magnet assembly providing a plasma confinement in a first direction facing the second rotary target. The second rotary target has a second magnet assembly providing a plasma confinement in a second direction facing the first rotary target. The first direction and the second direction deviate from being parallel to a substrate plane of the substrate by an angle of less than a first value. The method includes a second deposition on top of the first deposition. The second deposition includes: sputtering from the first and the second rotary target through the aperture, the aperture having at least a second size, the second size being larger than the first size. The first magnet assembly provides a plasma confinement in a third direction. The second magnet assembly provides a plasma confinement in a fourth direction. At least one of the third or the fourth direction deviate from being parallel to the substrate plane by an angle of at least a second value, the second value being larger than the first value.

[0005] According to an embodiment, a controller configured to be connectable to a system for depositing a material is provided. The controller is configured to control the system such that a method according to embodiments described herein is performed.

[0006] According to an embodiment, a method of depositing at least one material on a substrate is provided. The method includes a first deposition. The first deposition includes: sputtering from a first and a second rotary target through a first aperture, the first rotary target having a first magnet assembly providing a plasma confinement in a first direction facing the second rotary target, the second rotary target having a second magnet assembly providing a plasma confinement in a second direction facing the first rotary target. The first direction and the second direction deviate from being parallel to a substrate plane of the substrate by an angle of less than a first value. The method includes a second deposition on top of the first deposition. The second deposition includes: sputtering at least from a third rotary target through a second aperture, the second aperture having a larger size than the first aperture, the third rotary target having a third magnet assembly providing a plasma confinement in a third direction. The third direction deviates from being parallel to the substrate plane by an angle of at least a second value, the second value being larger than the first value.

[0007] According to an embodiment, a system for depositing at least one material on a substrate is provided. The system includes: a first target support for a first rotary target, a first magnet assembly connectable to the first target support, a second target support for a second rotary target, and a second magnet assembly connectable to the second target support. The first and the second magnet assembly, in a connected state, face a direction deviating from being parallel to a substrate plane of the substrate by an angle of less than a first value. The system further includes a third target support for a third rotary target, a third magnet assembly connectable to the third target support, the third magnet assembly, in a connected state, facing a direction deviating from being parallel to the substrate plane by an angle of at least a second value, the second value being larger than the first value. The system further includes a first aperture provided in a shield or between two shields to allow sputtered material from the first and the second rotary target to reach the substrate and a second aperture provided in a shield or between two shields to allow sputtered material at least from the third rotary target to reach the substrate, the second aperture having a larger size than the first aperture.

[0008] The present disclosure is to be understood as encompassing apparatuses and systems for carrying out the disclosed methods, including apparatus parts for performing each described method aspect. Method aspects may be performed for example by hardware components, by a computer programmed by appropriate software or by any combination of the two. The present disclosure is also to be understood as encompassing methods for operating described apparatuses and systems. Methods for operating the described apparatuses and systems include method aspects for carrying out every function of the respective apparatus or system.

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] So that the features recited above can be understood in detail, a more particular description of the subject matter briefly summarized above may be provided below by reference to embodiments. The accompanying drawings relate to embodiments and are described in the following:

FIGS. 1A-B are schematic, cross-sectional views of a system for depositing a material, according to embodiments described herein;

FIG. 2 is a chart illustrating a method of depositing a material on a substrate, according to embodiments described herein; FIG. 3 is a chart illustrating a method of depositing a material on a substrate, according to embodiments described herein;

FIG. 4 is a schematic, cross-sectional view of a system for depositing a material, according to embodiments described herein; and

FIG. 5 is a schematic, cross-sectional view of a system for depositing a material, according to embodiments described herein.

DETAILED DESCRIPTION OF EMBODIMENTS

[0010] Reference will now be made in detail to the various embodiments, wherein one or more examples of the embodiments are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided as an explanation and is not meant as a limitation. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.

[0011] FIGS. 1A-B are schematic, cross-sectional views of a system for depositing at least one material, according to embodiments described herein. The system may be particularly suitable for application in low-throughput applications, e.g. an R&D setting. The system 100 is for depositing the at least one material on a substrate 102. The substrate 102 may be provided on a substrate holder 104. The system 100 includes a first target support for a first rotary target 110 and a second target support for a second rotary target 120. The first and the second rotary target can each be mounted to the respective target support. In embodiments, the system includes the first and the second rotary target.

[0012] The system 100 includes a first magnet assembly 112 connectable to the first target support. In particular, when the first magnet assembly 112 is connected and a first rotary target 110 is mounted to the first target support, the first magnet assembly 112 is positioned within the first rotary target 110. The system further includes a second magnet assembly 122 connectable to the second target support. In particular, when the second magnet assembly 122 is connected and a second rotary target 120 is mounted to the second target support, the second magnet assembly 122 is positioned within the second rotary target 120.

[0013] Generally, a target support for a rotary target may include or consist of at least one end block. An end block may include a target mounting flange configured to support a rotary target while allowing rotation relative to the end block. The end block may include at least one utility shaft configured to support at least one magnet assembly. The end block may include a fitting for delivery of a cooling fluid to the rotary target.

[0014] Plasma associated with the sputter deposition may be trapped between the first and the second rotary target. The plasma confinement of the first magnet assembly and the plasma confinement of the second magnet assembly may overlap at least partially. In particular, the first and the second rotary target are neighboring targets. More particularly, there are no further targets positioned in a region between the first and the second rotary target.

[0015] In the context of the present disclosure, a plasma confinement is particularly to be understood as a plasma confinement region. A plasma confinement region may be understood as a region where the amount of plasma is increased relative to the environment, particularly due to the effect of a magnetic field of a magnet assembly located in a rotary target. In the context of the present disclosure, providing a plasma confinement in a specific direction is particularly to be understood as providing the plasma confinement such that a main direction of the plasma confinement extends in the specific direction.

[0016] Particularly in embodiments where the magnet assembly includes a permanent magnet, providing a plasma confinement in a specific direction may be understood as providing the magnet assembly at a position such that the magnet assembly faces the specific direction. In particular, a symmetry axis of the magnet assembly faces the specific direction. For example, providing a plasma confinement in a direction facing a rotary target, e.g. a neighboring rotary target, may be understood as the magnet assembly facing the rotary target.

[0017] According to some embodiments of the present disclosure, a plasma confinement is provided in a plasma racetrack, particularly a closed plasma racetrack. The plasma confinement associated with one magnet assembly provides a closed loop. The closed loop may for example be provided at one target, i.e. the target in which the magnet assembly is provided. [0018] Generally, a magnet assembly positioned within a rotary target may enable magnetron sputtering. As used herein, “magnetron sputtering” refers to sputtering performed using a magnetron, i.e. a rotary target having a magnet assembly positioned within. A magnet assembly is particularly to be understood as a unit capable of generating a magnetic field. A magnet assembly may include one or more permanent magnets. The permanent magnets may be arranged within a rotary target such that free electrons are trapped within the generated magnetic field, e.g. in a closed loop or a racetrack. The magnet assembly can be provided within a backing tube of the rotary target or within the target material tube. Rotary targets described herein may be a cathode or a portion of a cathode. The system may be configured for DC sputtering. In embodiments, the system may be configured for pulsed DC sputtering.

[0019] A rotary target is particularly to be understood as a rotatable sputtering target, such as a cylindrical sputtering target. In particular, the rotary target may be a rotatable cathode including a material to be deposited. The rotary target may be connected to a shaft configured to rotate in at least one operational state of the system. The rotary target may be connected to the shaft directly or indirectly via a connecting element. According to some embodiments, the rotary targets in a deposition chamber may be exchangeable. Replacement of the rotary targets after the material to be sputtered has been consumed can be made possible.

[0020] In rotary targets, the removal of material from the target during magnetron sputtering has an improved uniformity, when compared to magnetron sputtering from planar targets. The uniformity in the case of rotary targets is particularly caused by the movement of the target surface relative to the magnetic field due to the rotation of the targets. The amount of material collected on a target surface may be reduced or even eliminated. Arcing may be reduced or even eliminated. Material flaking may be reduced or eliminated. Stability, particularly long term stability of the deposition process may be increased. Use of the facing target sputtering concept for mass production may be enabled. Collection efficiency may be increased, particularly due to the effect that an increased amount of material deposited on a target is sputtered again. Collection efficiency is particularly to be understood as the amount of a sputtered material captured by a substrate relative to the total amount of material emitted by a sputtering target. Material utilization may be increased. Material waste and costs may be reduced. [0021] In embodiments, the first magnet assembly 112 includes at least three magnetic poles facing a plasma confinement 114 provided by the first magnet assembly. The second magnet assembly 122 may include at least three magnetic poles facing a plasma confinement 114 provided by the second magnet assembly 122. In the embodiment shown in FIGS. 1A-B, the first magnet assembly 112 and the second magnet assembly 116 each include three magnetic poles facing a plasma confinement provided by the respective magnet assembly.

[0022] The rotary targets 110, 120 may be positioned in a deposition chamber 150. In particular, the deposition chamber 150 is a vacuum chamber. A first additional chamber and a second additional chamber may be provided adjacent to the deposition chamber (not shown). According to some embodiments, which can be combined with other embodiments described herein, depositing a material on the substrate can be provided with a dynamic deposition process. For example, the substrate can move past the first rotary target and the second rotary target while material is deposited. The deposition chamber or regions of a vacuum processing system may be separated from further chambers or other regions by a valve.

[0023] According to some embodiments, process gases can include at least one of a noble gas or a reactive gas. For example, a noble gas can be argon, krypton, xenon, or combinations thereof. For example, a reactive gas can be oxygen, nitrogen, hydrogen, ammonia (NH3), ozone (03), an activated gas, or combinations thereof.

[0024] The term “substrate” as used herein shall embrace both inflexible substrates and flexible substrates. Examples of inflexible substrates include glass substrates, glass plates, wafers, or slices of a transparent crystal such as sapphire or the like. Examples of flexible substrates include webs or foils. According to yet further embodiments, which can be combined with other embodiments described herein, transportation of the substrate and/or the substrate carrier can respectively be provided by a magnetic levitation system. A carrier can be levitated or can be held without mechanical contact or with reduced mechanical contact by magnetic forces and may be moved by magnetic forces.

[0025] Each of the rotary targets may be a cathode. The rotary cathodes may be electrically connected to a DC power supply. For example, components like a housing of the deposition chamber or at least one shield within the deposition chamber can be provided on mass potential. The components may serve as an anode. Optionally, a system may further include anodes. In embodiments, which can be combined with other embodiments described herein, at least one or more of the rotary targets may be electrically connected to a respective individual power supply. In particular, each of the rotary targets may be connected to a respective individual power supply. For example, the first rotary target may be connected to a first and the second rotary target to a second DC power supply.

[0026] Particularly in embodiments where non-reactive sputtering is performed, the material to be deposited on the substrate may be sputtered from any of the first or the second rotary target. This is particularly to be understood such that particles ejected from a surface of the first or second rotary target form the deposited material. Particularly in embodiments where reactive sputtering is performed, particles of a first material may be ejected from a surface of any of the first or the second rotary target. The particles of the first material may combine with a second material to form the material to be deposited on the substrate. The first material can be understood to be a component of the deposited material. A gas surrounding the first and the second rotary target may include the second material.

[0027] In embodiments, which can be combined with other embodiments described herein, the plasma associated with the sputtering and the substrate are moved relative to each other during the deposition of a material on the substrate. For example, the substrate may oscillate during the deposition, particularly back and forth between two positions.

[0028] The system further includes an adjustable aperture 115 provided in a shield or between at least two shields, particularly as a gap between at least two shields. Shields provided in the deposition chamber 150 may protect a back part of the deposition chamber. The aperture 115 may be provided between a first shield 106 and a second shield 116, as shown in the depicted embodiment. In particular, assuming that a first rotary target 110 is mounted to the first target support, the first shield 106 is provided between the first rotary target 110 and a deposition area. A deposition area is particularly to be understood as an area where the substrate 102 is to be located during a deposition. Analogously, the second shield 116 may be provided between the second rotary target 120 and the deposition area.

[0029] In the context of the present disclosure, an aperture size is particularly to be understood as a size of a gap between the shields, more particularly as the distance between the shields. A size of the aperture 115 may be adjustable by changing a distance between the shields. At least - Sl one of the first shield 106 or the second shield 116 may be movable, particularly in a direction parallel to a substrate plane of the substrate 102. In particular, a size of the aperture 115 can be adjusted by moving at least one of the shields.

[0030] In embodiments, the first shield 106 includes a first shield magnet assembly 108. The second shield 116 may include a second shield magnet assembly 118. The second shield magnet assembly 118 may face the first shield magnet assembly 116. Each of the first shield magnet assembly’s magnetic poles facing the second shield magnet assembly may have an opposite polarity to a respectively nearest magnetic pole of the second shield magnet assembly. The magnetic field in the aperture 115 between the first shield 106 and the second shield 116 may be the field of a magnetic lens. In the magnetic field, charged particles may be deflected. A normal component with respect to a substrate surface of a momentum of charged particles may be reduced. The normal component of the momentum is responsible for the possible damage, particularly the possible depth of damage, caused by the charged particles to the substrate or the layer positioned on the substrate. Shields including shield magnet assemblies can mitigate damage to the substrate, particularly damage to sensitive coatings provided on the substrate.

[0031] The system further includes a controller configured to control the system such that a method of depositing at least one material on a substrate, as described herein, is performed. The method may be particularly suitable for a batch-type dynamic deposition system.

[0032] In embodiments, the at least one material includes or is a metal, a metal oxide (MOx), or a transparent conductive oxide (TCO). The metal may be for example Ag, MgAg, Al, Yb, Ca, or Li. The metal oxide may be for example IGZO, AIO, MoO, or WOx. The TCO may be for example indium zinc oxide (IZO), indium tin oxide (ITO), or aluminum-doped zinc oxide (AZO).

[0033] In particular, methods according to the present disclosure include a first deposition. An example of a configuration of the system 100 during the first deposition is shown in FIG. 1 A. The first deposition includes: sputtering from the first and the second rotary target through the adjustable aperture 115, the aperture having less than a first size. The first magnet assembly 112 provides a plasma confinement 114 in a first direction facing the second rotary target 120, particularly during deposition of the material. The second magnet assembly 122 provides a plasma confinement 114 in a second direction facing the first rotary target 110, particularly during deposition of the material. In other words, during the first deposition, the magnet assemblies may be in a facing target sputtering configuration.

[0034] In embodiments, an aperture can be smaller than a first size. The first size is for example 40 mm, 70 mm, 100 mm, or 130 mm. During the first deposition, the aperture 115, as shown in FIG. 1 A, may have a size of for example 50 mm. Generally, the aperture can have a size of for example 30 mm, 50 mm, or 70 mm during the first deposition. The aperture may have a size larger than for example 5 mm, 15 mm, or 20 mm during the first deposition. The size of the aperture may be constant or it may change, particularly increase, during the first deposition.

[0035] The feature that the aperture has a size smaller than a first size during the first deposition has the advantage that a spatial variation of the deposition rate on different parts of the substrate can be reduced. In particular, it can be avoided that material is simultaneously deposited on different parts of the substrate with highly differing deposition rates. For example, when the plasma confinement directions are facing each other directly, a substrate region facing a central region between the rotary targets could otherwise be exposed to a much higher deposition rate than other parts of the substrate. The aperture having a size smaller than a first size during the first deposition is beneficial for depositing material with an even thickness.

[0036] The feature that plasma confinements are provided in a first direction facing the second rotary target and in a second direction facing the first rotary target has the advantage that a soft deposition can be achieved. For example, bombardment of the substrate with high energy particles may be reduced. Damage to the substrate, particularly to a coating on the substrate, may be mitigated. This is particularly advantageous regarding deposition on sensitive substrates or layers, more particularly deposition on substrates having a sensitive coating. The first deposition can be understood as a protective deposition or a seed deposition.

[0037] The first direction and the second direction deviate from being parallel to a substrate plane of the substrate by an angle of less than a first value. In the context of the present disclosure, the “substrate plane” particularly refers to a plane of the substrate 102 whereupon the material is deposited. The first value may be for example 40, 30, 20 or 10°. As shown in Fig. 1 A, the first and the second direction may be parallel to the substrate plane. In other words, an angle of deviation from an orientation parallel to the substrate plane may be 0°. In embodiments, the first direction and the second direction deviate from being parallel to the substrate plane by an angle of less than 40°, 30° or 20° towards the substrate and less than 10° away from the substrate.

[0038] An advantageous configuration may be achieved, wherein bombardment of the substrate with energetic particles is minimized, while at least a satisfactory amount of material is deposited on the substrate. If any of the first and the second direction highly deviates from being parallel to the substrate plane in a direction towards the substrate, a disadvantageous bombardment of the substrate with energetic particles could ensue. If any of the first direction and the second direction highly deviates from being parallel to the substrate plane in a direction away from the substrate, an unsatisfactorily low deposition rate on the substrate could ensue. Additionally or alternatively, a waste of target material could arise.

[0039] The first direction may correspond to a first angle, particularly a first polar angle of a polar coordinate system. The reference point, particularly the pole, of the polar coordinate system, may be positioned on a rotation axis of the rotary target. The reference direction of the polar coordinate system may be perpendicular to the rotation axis of the rotary target. The deviation of the first direction from being parallel to a substrate plane may refer to a polar coordinate system of the first rotary target. The deviation of the second direction from being parallel to a substrate plane may refer to a polar coordinate system of the second rotary target.

[0040] In embodiments, magnets included in each of the system’s magnet assemblies may deviate from being parallel to each other. In other words, magnets of each of the system’s magnet assemblies may enclose an opening angle. In particular, at least one of the magnets may deviate from being parallel to the magnet assembly’s center axis or symmetry axis by an angle of more than for example 3, 6, or 10°. The at least one magnet may deviate from being parallel to the center axis or symmetry axis by an angle of less than for example 30°, 25°, or 15°.

[0041] For example, when depositing electrodes of an OLED, the material may have to be deposited on a highly sensitive layer. For some materials, particularly transparent conductive oxides or metal oxides, soft deposition via conventional technology like evaporation may be impossible. Embodiments of the present disclosure employ a facing target design to solve this. By using rotary targets, in line with embodiments of the present disclosure, target surface contamination may be mitigated and system up-times may be increased. Further, via the soft deposition as described herein, a number of high-energy particles, like sputter particles, negative ions, and electrons impinging on the substrate may be reduced. A change of a temperature on or near the substrate surface may be reduced. In particular, a lower temperature on or near the substrate surface may be achieved.

[0042] The method includes a second deposition on top of the first deposition. In particular, the second deposition provides material to a region above the material provided via the first deposition. In this regard, the term “above” particularly relates to a configuration where the substrate is located below the material provided via the first deposition. Generally, at least one further deposition may be provided between the first and the second deposition. During the at least one further deposition, the plasma confinement directions and the size of the aperture can be different than during the first and/or the second deposition. In embodiments, the second deposition may be provided directly on top of the first deposition.

[0043] An example of a configuration of the system 100 during the second deposition is shown in FIG. IB. The second deposition includes: sputtering from the first and the second rotary target through the aperture 115, the aperture having at least a second size, the second size being larger than the first size. The first magnet assembly 112 provides a plasma confinement 114 in a third direction. The second magnet assembly 122 provides a plasma confinement 114 in a fourth direction. At least one of the third or the fourth direction deviate from being parallel to the substrate plane by an angle of at least a second value, the second value being larger than the first value.

[0044] In embodiments, the aperture can be as large or larger than a second size. The second size can be, for example, 50 mm, 90 mm, 130 mm, or 180 mm. The second size may be at least for example 5 %, 25 %, or 35 % larger than the first size. Sputtering through an aperture having a larger size can lead to an increased deposition rate. During the second deposition, the aperture 115, as shown in FIG. IB, may have a size of for example 140 mm. Generally, the aperture can have a size of for example 120 mm, 140 mm, or 160 mm during the second deposition. In particular, the first size is associated with a first surface area of the aperture and the second size is associated with a second surface area of the aperture. More particularly, the second surface area is larger than the first surface area. The aperture may have a size smaller than for example 220°, 165°, or 125 mm during the second deposition. [0045] In embodiments, as mentioned above, at least one of the third or the fourth direction may deviate from being parallel to the substrate plane by an angle of at least a second value. The second value can be for example 15°, 30°, 50°, or 70°. The second value may be at least for example 5 %, 25 %, or 35 % larger than the first value. The first value particularly relates to the first and the second direction, as defined above. The third and the fourth direction may both deviate from being parallel to the substrate plane by an angle of at least the second value. As shown in FIG. IB, the third and the fourth direction may deviate from being parallel to the substrate plane by an angle of for example 60°. Generally, the directions may deviate from being parallel to the substrate plane by an angle of for example 50°, 60°, or 70°. The directions may deviate from being parallel to the substrate plane by an angle of less than for example 100°, 95°, or 85°.

[0046] By changing the plasma confinement directions, i.e. the directions the plasma confinements are provided in, a deposition rate may be increased. A plasma confinement direction can be changed particularly by changing a position of the magnet assembly providing the plasma confinement, more particularly by rotating the magnet assembly. Changing the plasma confinement directions can also be understood as changing the sputter direction. The aperture size may be increased simultaneously with the change of the plasma confinement directions. By increasing a size of the aperture, the deposition rate may be increased.

[0047] When the plasma confinement directions have a large component facing the substrate, a homogeneity of the deposition rate may be relatively high, for example as compared to when the plasma confinement directions are facing each other in a direction parallel to the substrate. When the plasma confinement directions have a large component facing the substrate, material may be deposited with an even thickness, particularly even without limiting the aperture size to small values. A high deposition rate can be achieved without compromising the thickness distribution of the deposited material.

[0048] The material deposited during the first deposition or an initial deposition, particularly on an OLED material, may serve as a protection, particularly as a protective layer, before deposition is undertaken with a higher material throughput, i.e. a higher deposition rate. As compared to deposition exclusively by facing target sputtering, the deposition time can be reduced. A productivity can be increased. Substrate exposure to the deposition environment, particularly residual gas contaminants and ultraviolet radiation from sputtering, can be lowered.

[0049] In embodiments, the plasma confinement directions of the first and the second magnet assembly are changed gradually or stepwise between the first and the second deposition. In particular, positions of the first and the second magnet assembly are changed gradually or stepwise between the first and the second deposition. During a change of the plasma confinement directions, material may be deposited, particularly continued to be deposited, on the substrate. The aperture size may be changed, particularly increased, simultaneously with the change of the plasma confinement directions.

[0050] In embodiments, the aperture, particularly shields providing the aperture, are electrically insulated. More particularly, the shields may have a defined electrical potential. The shields may be cooled to a temperature smaller than for example, 85 °C, 80 °C, or 60 °C. The temperature may be higher than for example 20 °C, 30 °C, or 40 °C. The shields may include flat surfaces. A surface of at least one of the shields may be roughened, particularly to avoid flaking.

[0051] The present disclosure further relates to a controller configured to be connectable to a system for depositing a material as described herein. In particular, the controller is configured to control the system such that a method of depositing at least one material, as described herein, is performed.

[0052] The controller may include a central processing unit (CPU), a memory and, for example, support circuits. To facilitate control of the system, the CPU may be one of any form of a general-purpose computer processor that can be used in an industrial setting for controlling various components and sub-processors. The memory is coupled to the CPU. The memory, or a computer readable medium, may be one or more readily available memory devices such as random-access memory, read only memory, a floppy disk, a hard disk, or any other form of digital storage either local or remote. The support circuits may be coupled to the CPU for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and related subsystems, and the like. [0053] Control instructions are generally stored in the memory as a software routine or program. The software routine or program may also be stored and/or executed by a second CPU that is remotely located from the hardware being controlled by the CPU. The software routine or program, when executed by the CPU, transforms the general-purpose computer into a specific purpose computer (controller) that controls a system for depositing a material, according to any of the embodiments of the present disclosure.

[0054] Methods of the present disclosure may be implemented as a software routine or program. At least some of the method operations disclosed herein may be performed via hardware as well as by a software controller. As such, the embodiments may be implemented in software as executed upon a computer system, and hardware as an application specific integrated circuit or another type of hardware implementation, or a combination of software and hardware. The controller may execute or perform a method of depositing a material on a substrate, according to embodiments of the present disclosure. Methods described herein can be conducted using computer programs, software, computer software products and interrelated controllers, which can have a CPU, a memory, a user interface, and input and output devices being in communication with corresponding components of the system for depositing a material.

[0055] FIG. 2 is a chart illustrating a method of depositing a material on a substrate, according to embodiments described herein. The method can be performed for example by a system as described above with regard to FIGS. 1A-B. The method 200 includes, in block 202, a first deposition including: sputtering from a first and a second rotary target through an aperture, the aperture being adjustable and having less than a first size. The first rotary target has a first magnet assembly providing a plasma confinement in a first direction facing the second rotary target. The second rotary target has a second magnet assembly providing a plasma confinement in a second direction facing the first rotary target. The first direction and the second direction deviate from being parallel to a substrate plane of the substrate by an angle of less than a first value.

[0056] The method includes, in block 204, adjusting the size of the aperture to at least a second size, the second size being larger than the first size. The magnet assemblies are adapted such that the first magnet assembly provides a plasma confinement in a third direction and the second magnet assembly provides a plasma confinement in a fourth direction. At least one of the third or the fourth direction deviate from being parallel to the substrate plane by an angle of at least a second value, the second value being larger than the first value. Especially in embodiments where a magnet assembly includes a permanent magnet, adapting the magnet assembly may be understood as providing the magnet assembly to a specific position within the rotary target, particularly with a specific orientation.

[0057] The method includes, in block 206, a second deposition on top of the first deposition. The second deposition includes: sputtering from the first and the second rotary target through the aperture, the aperture having the second size. The first magnet assembly provides a plasma confinement in the third direction. The second magnet assembly provides a plasma confinement in the fourth direction.

[0058] FIG. 4 is a schematic, cross-sectional view of a system for depositing at least one material, according to embodiments described herein. The system may be particularly suitable for application in high-throughput mass production. The system 300 is for depositing the at least one material on a substrate 102. The features described above with regard to FIGS. 1 - 2 can be applied mutatis mutandis to the systems and methods described below with regard to FIGS. 3 - 5.

[0059] The system 300 includes a first target support for a first rotary target 110. The first rotary target 110 can be mounted to the first target support. The system includes a first magnet assembly 112 connectable to the first target support. In particular, when the first magnet assembly 112 is connected and a first rotary target 110 is mounted to the first target support, the first magnet assembly 112 is positioned within the first rotary target 110. In embodiments, the system 300 includes the first rotary target 110.

[0060] The system 300 includes a second target support for a second rotary target 120 and a third target support for a third rotary target 330. The second and the third rotary target can each be mounted to the respective target support. In embodiments, the system includes the second and the third rotary target.

[0061] The system includes a second magnet assembly 122 connectable to the second target support. In analogy to the first magnet assembly, when the second magnet assembly 122 is connected to the second target support, the second magnet assembly 122 may be positioned within the second rotary target 120. The system further includes a third magnet assembly 332 connectable to the third target support. In analogy to the first magnet assembly, when the third magnet assembly 332 is connected to the third rotary target support, the third magnet assembly 332 may be positioned within the third rotary target 330.

[0062] In embodiments, the first and the second magnet assembly, in a connected state, face a direction deviating from being parallel to a substrate plane of the substrate 102 by an angle of less than a first value. In the context of the present disclosure, a connected state of a magnet assembly is particularly to be understood as the magnet assembly being connected to a target support. The third magnet assembly 332 may, in a connected state, face a direction deviating from being parallel to the substrate plane by an angle of at least a second value. The second value is larger than the first value. In the connected state, a position, particularly an orientation, of the magnet assemblies may be fixed.

[0063] As mentioned above, the first and the second magnet assembly may face a direction deviating from being parallel to a substrate plane by an angle of less than a first value. The first value may be for example 40°, 30°, 20° or 10°. In particular, the first magnet assembly faces a first direction and the second magnet assembly faces a second direction. As shown in FIG. 4, the first and the second direction may be parallel to the substrate plane. In other words, an angle of deviation from an orientation parallel to the substrate plane may be 0°. In embodiments, the first direction and the second direction deviate from being parallel to the substrate plane by an angle of less than 40°, 30° or 20° towards the substrate and less than 10° away from the substrate. Further, as mentioned above, the third magnet assembly may face a direction deviating from being parallel to the substrate plane by an angle of at least a second value. The second value may be for example 15°, 30°, 50°, or 70°. The second value may be at least for example 5 %, 25 %, or 35 % larger than the first value.

[0064] In embodiments, the system 300 includes a first aperture 115 provided in a shield or between two shields to allow sputtered material from the first and the second rotary target to reach the substrate 102. The first aperture 115 may be provided between a first shield 106 and a second shield 116, as shown in the depicted embodiment. [0065] In embodiments, the system 300 includes a second aperture 335 provided in a shield or between two shields to allow sputtered material at least from the third rotary target 330 to reach the substrate 102. The second aperture 335 has a larger size than the first aperture 115. The second aperture 335 may be provided between the second shield 116 and a third shield 126, as shown in the depicted embodiment. The sizes of the first and the second aperture may be fixed. In particular, positions of the first, the second, and the third shield may be fixed. A constructively simple deposition system can be provided.

[0066] In embodiments, the first aperture is smaller than a first size. The first size can be for example 40 mm, 70 mm, 100 mm, or 130 mm. The first aperture may have a size of for example 30 mm, 50 mm, or 70 mm. The first aperture may have a size larger than for example 5 mm, 15 mm, or 20 mm. The second aperture may be as least as large as a second size. The second size may be for example 50 mm, 90 mm, 130 mm, or 180 mm. The second size may be at least for example 5 %, 25 %, or 35 % larger than the first size. Sputtering through an aperture having a larger size can lead to an increased deposition rate. The second aperture may have a size of for example 120 mm, 140 mm, or 160 mm. The second aperture may have a size smaller than for example 220 mm, 165 mm, or 125 mm.

[0067] In embodiments, positions or orientations of the system’s magnet assemblies, e.g. the first, second, and third magnet assembly, may be adaptable. Additionally or alternatively, sizes of the system’s apertures, e.g. the first and the second aperture, may be adaptable. An advantage is that the system can be adjusted, depending for example on the sensitivity of the used substrate, particularly the sensitivity to a specific material to be deposited at certain process parameters.

[0068] In embodiments, the system 300 includes at least one additional rotary target. In total, the system may include for example more than 3, 5, or 7 rotary targets. The rotary targets of the system may be understood as forming an array of rotary targets. For example, the system shown in FIG. 4 includes eight rotary targets.

[0069] Generally, the system may include at least one pair of rotary targets adapted or adaptable for FTS with the plasma confinement directions being at least substantially parallel to a substrate plane. In the depicted embodiment, one such pair is shown, formed by the first rotary target 110 and the second rotary target 120. A soft deposition, as described herein, can be provided.

[0070] The system may include at least one pair of rotary targets adapted or adaptable for FTS with plasma confinement directions deviating from being parallel to a substrate plane by an angle of less than for example 90°, 85°, 65°, or 50°. In the depicted embodiment, two such pairs are shown. In particular, one of the pairs includes the third rotary target 330 and a fourth rotary target 340. An increased deposition rate can be provided, while at least partly maintaining characteristics of a soft deposition.

[0071] The system may further include at least one rotary target adapted or adaptable for sputtering with plasma confinement directions at least substantially facing the substrate. In the depicted embodiment, two such rotary targets are shown, i.e. the seventh rotary target 370 and the eighth rotary target 380. A particularly high deposition rate can be provided.

[0072] The system may include at least one further aperture. In particular, for each pair of rotary cathodes, the system can include an aperture for allowing material sputtered from the pair of rotary cathodes to reach the substrate. In particular, the sizes of the further apertures may be adapted or adaptable to appropriate values for the specific configurations of the rotary targets. More particularly, each aperture is provided in a shield or between at least two shields. Each of the shields may include at least one shield magnet assembly.

[0073] For example, as shown in FIG. 4, the system may include a third aperture 355 adjacent to the second aperture 335. The system may include a fourth aperture 375 adjacent to the third aperture 355. In particular, the third aperture 355 is provided between the third shield 126 and a fourth shield 136. The fourth aperture 375 may be provided between the fourth shield 136 and a fifth shield 146. The third aperture may be for example at least 5%, 25%, or 35% larger than the second aperture. The fourth aperture may be for example at least 5%, 25%, or 35% larger than the third aperture.

[0074] In embodiments, the system 300 includes a controller configured to control the system such that a method of depositing at least one material on a substrate, as described herein, is performed. The method may be particularly suitable for an in-line dynamic deposition system. [0075] In particular, methods according to the present disclosure include a first deposition. The first deposition includes sputtering from a first and a second rotary target through a first aperture 115. The first rotary target 110 has a first magnet assembly 112 providing a plasma confinement 114 in a first direction facing the second rotary target 120. The second rotary target 120 has a second magnet assembly 122 providing a plasma confinement 114 in a second direction facing the first rotary target 110. The first direction and the second direction deviate from being parallel to a substrate plane of the substrate 102 by an angle of less than a first value. The first deposition can be understood as a protective deposition or a seed deposition, analogously as described in detail above, particularly with regard to FIGS. 1 - 2.

[0076] The method includes a second deposition on top of the first deposition. In particular, the second deposition provides material to a region above the material provided via the first deposition. In this regard, the term “above” particularly relates to a configuration where the substrate is located below the material provided via the first deposition. Generally, at least one further deposition may be provided between the first and the second deposition. Magnet assemblies of targets used for the at least one further deposition may provide different plasma confinement directions than the plasma confinement directions associated with the first or the second deposition. The at least one further deposition can include sputtering through a respective aperture having a different size than the first aperture and/or a second aperture associated with the second deposition. In embodiments, the second deposition may be provided directly on top of the first deposition.

[0077] The second deposition includes: sputtering at least from a third rotary target 330 through a second aperture 335. The second aperture 335 has a larger size than the first aperture 115. The third rotary target 330 has a third magnet assembly 332 providing a plasma confinement 114 in a third direction. The third direction deviates from being parallel to the substrate plane by an angle of at least a second value. The second value is larger than the first value.

[0078] Depositing the at least one material on the substrate 102 can be provided with a dynamic deposition process. In particular, the substrate 102 can move past the rotary targets while material is deposited. More particularly, the substrate 102 may move in a direction such that the substrate 102 moves past the first rotary target 110 before moving past the second rotary target 120. The deposition chamber 150 may be separated from further chambers (not shown) by a valve.

[0079] The method may include sputtering a layer stack. The layer stack may include a metal and a transparent conductive oxide (TCO) deposited on the metal. For example, the layer stack may include Ag deposited on IZO. During sputtering of the metal, the magnet assemblies may be in a facing target sputtering (FTS) configuration, particularly to provide a soft deposition. A soft deposition may be understood as a deposition according to features of the first deposition of the method. In particular, a magnet assembly being in an FTS configuration can be understood as the magnet assembly’s plasma confinement direction deviating from being parallel to a substrate plane by an angle of less than for example 90°, 85°, 65°, or 50° or even being at least substantially parallel to the substrate plane.

[0080] The TCO may be deposited partly with the magnet assemblies in an FTS configuration and partly with the magnet assemblies in a direct sputtering configuration. Partly depositing the TCO with magnet assemblies in an FTS configuration may be understood as performing a seed deposition. In particular, material deposited during the seed deposition is part of the final TCO layer after completion of the full deposition.

[0081] A layer stack may include a first metal layer and a second metal layer deposited on the first metal layer. The layer stack may further include a TCO deposited on the second metal. As an example, the first metal can be Li or Yb, the second metal Ag, and the TCO may be IZO. [0082] A layer stack may include a first metal oxide layer and a second metal oxide layer. The first and the second metal oxide can be different materials or the same material but with differing stoichiometries. As an example, the first and the second metal oxide layers may be respectively stoichiometrically different IGZO layers.

[0083] A layer stack may include a first TCO layer, a metal layer deposited on the first TCO layer, and a second TCO layer deposited on the metal layer. For example, the first TCO layer and the metal layer may be deposited with magnet assemblies in an FTS configuration. The second TCO layer may be deposited partly in an FTS configuration and partly in a direct sputtering configuration. [0084] In embodiments, metals are deposited exclusively with magnet assemblies in an FTS configuration. Metal oxides may be deposited for example with magnet assemblies in an FTS configuration. Alternatively, metal oxides may be deposited partly with magnet assemblies in an FTS configuration and partly with magnet assemblies in a direct sputtering configuration.

[0085] In the context of the present disclosure, depositing a material is particularly to be understood as depositing a single layer. The single layer may be deposited partly with different deposition system configurations. The single layer may be deposited partly via at least one different deposition source. Within a single layer, the material properties may be at least substantially homogeneous.

[0086] FIG. 5 is a schematic, cross-sectional view of a system for depositing a material, according to embodiments described herein. The system 400 is a modification of the system shown in FIG. 4. As can be seen, the system 400 may include a fourth magnet assembly 442 connectable to the second target support in addition to the second magnet assembly 122. In particular, when the fourth magnet assembly 442 is connected and the second rotary target 120 is mounted to the second target support, the fourth magnet assembly 442 is positioned within the second rotary target 120. The fourth magnet assembly 442 may be adapted or adaptable to provide a plasma confinement in a direction facing the third rotary target 330.

[0087] Analogously, the system may include a fifth magnet assembly 452 connectable to the third target support, in addition to the third magnet assembly 332. By including rotary targets with more than one magnet assembly, a deposition rate may be increased compared to a system where only one magnet assembly is positioned in each rotary target. The increase stems particularly from a generation of two racetracks. In particular, the two racetracks are located on different sections or even on opposite sides of the target. The remaining features of the system may correspond at least substantially to the features described above with regard to FIG. 4.

[0088] FIG. 3 is a chart illustrating a method of depositing at least one material, according to embodiments described herein. The method can be performed for example by systems as described above with regard to FIGS. 4-5. The method may be particularly suitable for a batch- type dynamic deposition system. The method 500 is for depositing at least one material on a substrate. The at least one material may include a metal, a metal oxide or a transparent conductive oxide.

[0089] The method 500 includes, in block 502, a first deposition. The first deposition includes: sputtering from a first and a second rotary target through a first aperture. The first rotary target has a first magnet assembly providing a plasma confinement in a first direction facing the second rotary target. The second rotary target has a second magnet assembly providing a plasma confinement in a second direction facing the first rotary target. The first direction and the second direction deviate from being parallel to a substrate plane of the substrate by an angle of less than a first value. The first value may be for example 40, 30, 20 or 10° .

[0090] The method may include, in block 504, moving the substrate in a direction parallel to a substrate plane of the substrate. In particular, material deposited during the first deposition on the substrate can be transported to a different location where a subsequent deposition may take place.

[0091] The method includes, in block 506, a second deposition on top of the first deposition, particularly directly on top of the first deposition. The second deposition includes: sputtering at least from a third rotary target through a second aperture. The second aperture has a larger size than the first aperture. The third rotary target has a third magnet assembly providing a plasma confinement in a third direction. The third direction deviates from being parallel to the substrate plane by an angle of at least a second value. The second value is larger than the first value.

[0092] Embodiments described herein can be utilized for Display PVD, i.e. sputter deposition on large area substrates for the display market. According to some embodiments, large area substrates or respective carriers, wherein the carriers have a plurality of substrates, may have a size of at least 0.67 m ² Typically, the size can be about 0.67m2 (0.73x0.92m - GEN 4.5) to about 8 m ² , more typically about 2 m ² to about 9 m ² or even up to 12 m ² . Typically, the substrates or carriers, for which the structures, apparatuses, such as cathode assemblies, and methods according to embodiments described herein are provided, are large area substrates as described herein. For instance, a large area substrate or carrier can be GEN 4.5, which corresponds to about 0.67 m ² substrates (0.73x0.92m), GEN 5, which corresponds to about 1.4 m ² substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m ² substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m ² substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m ² substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented. [0093] While the foregoing is directed to some embodiments, other and further embodiments may be devised without departing from the basic scope of the disclosure. The scope is determined by the following claims.