Title:
METHOD FOR DEPOSITING TUNGSTEN IN HIGH ASPECT RATIO STRUCTURE AND SEMICONDUCTOR SUBSTRATE THEREOF
Document Type and Number:
WIPO Patent Application WO/2024/007894
Kind Code:
A1
Abstract:
Disclosed in the present invention are a method for depositing tungsten in a high aspect ratio structure and a semiconductor substrate thereof. The high aspect ratio structure is a recessed structure with an aspect ratio larger than 50. The method comprises: a first deposition step, which involving depositing a tungsten material layer with a first thickness on a side wall and the bottom of the recessed structure; a treatment step, which involving introducing a treatment gas to a surface of the substrate, wherein the treatment gas comprises a free radical containing fluorine/chlorine and a free radical at least containing one of carbon, sulfur, nitrogen, hydrogen or oxygen; and a second deposition step, which involving: depositing a tungsten material layer with a second thickness, such that at least part region of the recessed structure is filled with tungsten. The method has the advantages that the free radicals in the treatment gas form a surface bond on the surface of the tungsten material layer, such that the subsequent tungsten material deposition at the position is retarded; and the etching with the free radical containing fluorine/chlorine further prevents premature closing of the opening at the top of the recessed structure, such that gaps in the recessed structure are moved downwards and narrowed, and the gaps are prevented from being exposed during a subsequent CMP treatment process, thereby facilitating prolonging the service life and the electrical performance of the substrate.
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Inventors:
ZHUANG YUFENG (CN)
LV SHULIANG (CN)
LI YUAN (CN)
TAO HENG (CN)
LV SHULIANG (CN)
LI YUAN (CN)
TAO HENG (CN)
Application Number:
PCT/CN2023/102755
Publication Date:
January 11, 2024
Filing Date:
June 27, 2023
Export Citation:
Assignee:
ADVANCED MICRO FABRICATION EQUIPMENT INC CHINA (CN)
International Classes:
H01L21/768
Foreign References:
| CN115172268A | 2022-10-11 | |||
| CN106169440A | 2016-11-30 | |||
| US20120199887A1 | 2012-08-09 | |||
| CN105470194A | 2016-04-06 | |||
| CN110797300A | 2020-02-14 |
Attorney, Agent or Firm:
SUNSHINEIP INTELLECTUAL PROPERTY LAW FIRM et al. (CN)
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