METHOD AND DEVICE FOR EVALUATING ATOMIC VACANCIES IN SILICON WAFER SURFACE LAYER

WIPO Patent Application WO/2015/068391

A1

　In the present invention, a method for evaluating atomic vacancies in a silicon wafer surface layer includes: an element formation step in which a pair of comb-shaped electrodes (31, 32) are formed on the same surface of a silicon sample (6) over piezoelectric thin films (29, 30); a detection step during which the silicon sample (6) is cooled and an ultrasonic pulse is generated from one comb-shaped electrode (31) while an external magnetic field is applied, the ultrasonic pulse being propagated through the surface of the silicon sample (6) and received by the other comb-shaped electrode (32), and a phase difference being detected between the ultrasonic pulse generated by the one comb-shaped electrode (31) and the ultrasonic pulse received by the other comb-shaped electrode (32); and an evaluation step during which the elastic constant of the surface of the silicon sample (6) is determined on the basis of the phase difference, and the atomic vacancies in the surface of the silicon sample (6) are evaluated on the basis of changes in the elastic constant according to temperature or changes in the elastic constant according to the intensity of the magnetic field.

GOTO TERUTAKA (JP)
NEMOTO YUICHI (JP)
KANETA HIROSHI (JP)
AKATSU MITSUHIRO (JP)
MITSUMOTO KEISUKE (JP)

PCT/JP2014/005580

May 14, 2015

November 05, 2014

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UNIV NIIGATA (JP)

G01N29/04; H01L21/66

JP2007263960A	2007-10-11
JP2005037153A	2005-02-10
JPH07174742A	1995-07-14

SAKURA PATENT OFFICE, p. c. et al. (JP)
Patent business corporation cherry tree international patent firm (JP)

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