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Title:
METHOD AND DEVICE FOR PRODUCING ELECTRICALLY CONDUCTIVE CONTINUITY IN SEMICONDUCTOR COMPONENTS
Document Type and Number:
WIPO Patent Application WO1998059098
Kind Code:
A3
Abstract:
The invention relates to a process and a device for the production of electrically conductive passages in semiconductor components preferably positioned on a semiconductor, by means of thermo-migration through the production of a temperature gradient between two opposing outer surfaces of the semiconductor components and application of a conductive doping substance to a cooler outer surface. One outer surface of the semiconductor is positioned on a cooled sample take-up and the opposing outer surface is exposed to heat radiation, which can be controlled both with regard to its total efficiency and its efficiency distribution over the surface of the semiconductor. The total efficiency and/or the efficiency distribution of the heat radiation is adjusted depending upon the temperature measured on at least one temperature measurement point on the semiconductor and/or a semiconductor component.

Inventors:
KRIEGEL BERND (DE)
KUDELLA FRANK (DE)
ARNOLD RENE (DE)
Application Number:
PCT/DE1998/001768
Publication Date:
March 18, 1999
Filing Date:
June 22, 1998
Export Citation:
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Assignee:
HEIDENHAIN GMBH DR JOHANNES (DE)
SILICON SENSOR GMBH (DE)
KRIEGEL BERND (DE)
KUDELLA FRANK (DE)
ARNOLD RENE (DE)
International Classes:
C30B13/02; H01L21/00; H01L21/22; H01L21/225; H01L21/24; H01L23/52; H01L21/3205; H01L21/768; H01L23/48; H01L31/02; H01L31/0224; H01L31/10; (IPC1-7): C30B13/02; H01L21/24; H01L31/0224; H01L21/768; H01L23/48
Domestic Patent References:
WO1983003710A11983-10-27
Foreign References:
US4221956A1980-09-09
US4224504A1980-09-23
EP0101762A11984-03-07
US4141757A1979-02-27
US4159215A1979-06-26
US4157564A1979-06-05
US4101759A1978-07-18
US4097226A1978-06-27
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