Title:
METHOD FOR DOPING CARBON IN THIN FILM ON WAFER
Document Type and Number:
WIPO Patent Application WO/2023/121228
Kind Code:
A1
Abstract:
The present invention provides a method for doping carbon in a thin film on a wafer, the method comprising the steps of: arranging a thin film-formed wafer in a processing chamber; supplying an atmospheric gas into the processing chamber to bring the pressure in the processing chamber to a process pressure higher than atmospheric pressure; heating the processing chamber to bring the temperature of the processing chamber to a processing temperature; and supplying a source gas containing carbon to the processing chamber to allow the source gas to undergo a chemical reaction with the thin film under the process pressure at the process temperature, thereby injecting the carbon into the thin film.
Inventors:
CHO SUNG KIL (KR)
Application Number:
PCT/KR2022/020849
Publication Date:
June 29, 2023
Filing Date:
December 20, 2022
Export Citation:
Assignee:
HPSP CO LTD (KR)
International Classes:
C30B31/16; C30B31/18; H01L21/02
Foreign References:
| JP2021008388A | 2021-01-28 | |||
| KR20040103548A | 2004-12-09 | |||
| KR102114857B1 | 2020-05-25 | |||
| KR20010104285A | 2001-11-24 | |||
| KR20030077262A | 2003-10-01 |
Attorney, Agent or Firm:
JYK IP LAW FIRM (KR)
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