METHOD FOR DRIVING RESISTANCE CHANGE ELEMENT, INITIAL PROCESSING METHOD, AND NONVOLATILE STORAGE DEVICE

WIPO Patent Application WO/2010/038442

A1

Provided are a method for driving a resistance change element capable of a stable operation and a nonvolatile storage device which implements the method.  The method comprises a writing step for changing the resistance state of a resistance change layer (3) from a high-resistance state to a low-resistance state by applying a write voltage pulse of a first polarity to the resistance change layer (3), and an erasing step for changing the resistance state of the resistance change layer (3) from the low-resistance state to the high-resistance state by applying an erase voltage pulse of a second polarity different from the first polarity to the resistance change layer (3), wherein |Vw1|>|Vw2| is satisfied, where Vw1 is the voltage value of the first to N-th (N is one or more) write voltage pulses and Vw2 is the voltage value of the (N+1)-th and subsequent write voltage pulses, |Ve1|>|Ve2| is satisfied, where Ve1 is the voltage value of the first to M-th (M is one or more) erase voltage pulses, and Ve2 is the voltage value of the (M+1)-th and subsequent erase voltage pulses, and the (N+1)-th writing step follows the M-th erasing step.

MURAOKA SHUNSAKU
TAKAGI TAKESHI
MITANI SATORU
KATAYAMA KOJI

PCT/JP2009/005017

April 08, 2010

September 30, 2009

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PANASONIC CORP (JP)
MURAOKA SHUNSAKU
TAKAGI TAKESHI
MITANI SATORU
KATAYAMA KOJI

G11C13/00; H01L27/10; H01L45/00; H01L49/00

WO2008149484A1

2008-12-11

JP2007004873A	2007-01-11
JP2007004849A	2007-01-11

NII, Hiromori (JP)
New house extensive 守 (JP)

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