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Patent Searching and Data


Title:
METHOD FOR ESTIMATING TWIN DENSITY
Document Type and Number:
WIPO Patent Application WO/2020/204381
Kind Code:
A1
Abstract:
The present invention relates to a method which permits even an inexperienced operator to quantitatively estimate twin density in a large-size single-crystal sample by means of a standardized method even without the use of expensive and complicated equipment. More specifically, the present invention relates to a method for estimating twin density in a single-crystal sample, characterized by comprising the steps of: (A) etching the observed plane of a single crystal to form etch pits; (B) selecting bar-shaped etch pits caused by twinning; (C) from the major axial lengths of the etch pits caused by twinning, estimating the twin density by using the following equation: twin density = ∑kx'i/area of sample, wherein 2 ≤ k ≤ 3, and x'i is the major axial length of an etch pit caused by the i-th twin.

Inventors:
HONG SOON-KU (KR)
NGO SI TRONG (KR)
LE DUY DUC (KR)
LEE JUNGKUK (KR)
Application Number:
PCT/KR2020/003338
Publication Date:
October 08, 2020
Filing Date:
March 11, 2020
Export Citation:
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Assignee:
IAC IN NAT UNIV CHUNGNAM (KR)
International Classes:
G01N21/95; G01B11/22; G01N21/88; G02B21/00; H01L21/66
Foreign References:
JP2010223812A2010-10-07
JP2011124354A2011-06-23
JP2011027427A2011-02-10
JP2012193069A2012-10-11
KR102012809B12019-08-21
Other References:
JOO, YOUNG JUN ET AL: "Microstnicture Analyses ofAluminum Nitride (AIN) Using Transmission Electron Microscopy (TEM) and Electron Back-scatteredDiffraction (EBSD).) See pages 128-132.", JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY., vol. 25, no. 4, August 2015 (2015-08-01), pages 127 - 134, XP055746018, DOI: 10.6111/JKCGCT.2015.25.4.127
Attorney, Agent or Firm:
KIM, Wonjoon (KR)
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