Title:
METHOD OF ETCHING DIELECTRIC MATERIALS
Document Type and Number:
WIPO Patent Application WO2002097866
Kind Code:
A3
Abstract:
The invention relates to a method for dry etching of a silicon oxide substrate. The method comprises the steps of generating a non-etch plasma from an inert gas, subjecting the silicon oxide substrate to the resulting plasma to bring the silicon oxide to a stable elevated temperature, generating an etch plasma from a reactive gas or gas mixture containing a reactive gas, and subjecting the silicon oxide substrate, which is at the stable elevated temperature, to the resulting etch plasma to effect etching of the substrate. By subjecting the silicon oxide sample to an inert gas plasma prior to the etch step, and thus stabilizing the temperature of the silicon oxide, it has been found that a dramatic improvement in the verticality of etched side walls can be obtained.
Inventors:
LAMONTAGNE BORIS (CA)
RENDER WILLIAM (CA)
DELAGE ANDRE (CA)
JANZ SIEGFRIED (CA)
ERICKSON LYNDEN (CA)
XU DAN-XIA (CA)
CHEBEN PAVEL (CA)
CHARBONNEAU SYLVAIN (CA)
RENDER WILLIAM (CA)
DELAGE ANDRE (CA)
JANZ SIEGFRIED (CA)
ERICKSON LYNDEN (CA)
XU DAN-XIA (CA)
CHEBEN PAVEL (CA)
CHARBONNEAU SYLVAIN (CA)
Application Number:
PCT/CA2002/000785
Publication Date:
July 10, 2003
Filing Date:
May 28, 2002
Export Citation:
Assignee:
LNL TECHNOLOGIES CANADA INC (CA)
LAMONTAGNE BORIS (CA)
RENDER WILLIAM (CA)
DELAGE ANDRE (CA)
JANZ SIEGFRIED (CA)
ERICKSON LYNDEN (CA)
XU DAN-XIA (CA)
CHEBEN PAVEL (CA)
CHARBONNEAU SYLVAIN (CA)
LAMONTAGNE BORIS (CA)
RENDER WILLIAM (CA)
DELAGE ANDRE (CA)
JANZ SIEGFRIED (CA)
ERICKSON LYNDEN (CA)
XU DAN-XIA (CA)
CHEBEN PAVEL (CA)
CHARBONNEAU SYLVAIN (CA)
International Classes:
C23C16/40; H01L21/00; H01L21/311; H01L21/461; (IPC1-7): H01L21/311; C23C16/40
Domestic Patent References:
| WO1996041369A1 | 1996-12-19 |
Foreign References:
| US4445966A | 1984-05-01 | |||
| EP0926716A1 | 1999-06-30 | |||
| US5877032A | 1999-03-02 | |||
| EP0805483A1 | 1997-11-05 |
Other References:
ANONYMOUS: "Two Stage Process for Plasma Etching Cermet Films. January 1983.", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 25, no. 8, 1 January 1983 (1983-01-01), New York, US, pages 4352, XP002232697
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 11 30 September 1999 (1999-09-30)
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 11 30 September 1999 (1999-09-30)
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