METHOD FOR FABRICATING HIGH PRECISION MEMS INERTIAL SENSOR USING SOI WAFER AND ACCELEROMETER

Title:

METHOD FOR FABRICATING HIGH PRECISION MEMS INERTIAL SENSOR USING SOI WAFER AND ACCELEROMETER

Document Type and Number:

WIPO Patent Application WO/2019/109639

Kind Code:

A1

Abstract:

A method for fabricating a high precision MEMS inertial sensor using an SOI wafer and an accelerometer, wherein the method for fabricating a high precision MEMS inertial sensor comprises the following steps: 1. Processing an SOI wafer: fabricating a driving capacitive plate (3) and a packaging bump (1) on a device layer (7) of the SOI wafer, and adopting a deep silicon etching process to etch an etching groove (6) directly into a sacrificial layer (8) of the SOI wafer so as to complete integrated processing of a silicon-based detection mass block (2) and a spring (4); fabricating a mask on a support layer (9), and adopting a deep silicon etching process to fabricate a release hole structure directly in the sacrificial layer (8) of the SOI wafer; etching the sacrificial layer (8) of the SOI wafer to release a movable component; 2. Fabricating cover plates (1001, 1004); 3. Alignment packaging to form a MEMS inertial sensor. The invention can effectively produce a large detection mass block with higher accuracy in capacitive displacement detection to resolve the issue of low precision of a MEMS inertial sensor. The micro-electromechanical accelerometer produced can resolve issues of high manufacturing costs and long manufacturing periods of traditional accelerometers.

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Inventors:

LIU HUAFENG (CN)
TU LIANGCHENG (CN)
SONG XIAOXIAO (CN)
WU WENJIE (CN)
LIU JINQUAN (CN)
RAO KANG (CN)
QU ZIQIANG (CN)
XU XIAOCHAO (CN)

Application Number:

PCT/CN2018/095022

Publication Date:

June 13, 2019

Filing Date:

July 09, 2018

Export Citation:

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Assignee:

UNIV HUAZHONG SCIENCE TECH (CN)

International Classes:

G01C21/16; G01V7/00

Foreign References:

CN108151735A	2018-06-12
CN108152862A	2018-06-12
CN102645556A	2012-08-22
CN101844739A	2010-09-29
US20120248506A1	2012-10-04
CN204439662U	2015-07-01
CN201828268U	2011-05-11

Attorney, Agent or Firm:

HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY PATENT AGENCY CENTER (CN)

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