Title:
METHOD FOR FABRICATING MAGNETIC RANDOM ACCESS MEMORY AND MAGNETIC RANDOM ACCESS MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/279738
Kind Code:
A1
Abstract:
Embodiments of the present disclosure provide a method for fabricating a magnetic random access memory and a magnetic random access memory. The method comprises: sequentially fabricating a bottom electrode through hole, a bottom electrode, a magnetic tunnel structure, a top electrode, and an insulating layer on a semiconductor substrate; forming a first interlayer dielectric layer on the insulating layer; forming an etch stop layer on the first interlayer dielectric layer; forming a second interlayer dielectric layer on the etch stop layer; etching the second interlayer dielectric layer located above the top electrode to the etch stop layer to form a first trench; performing inclined self-aligned implantation on the first interlayer dielectric layer corresponding to the bottom of the first trench; continuing to etch the first trench to the top end surface of the top electrode to form a second trench, wherein a via hole is formed penetrating the first trench and the second trench, and the critical dimensions of the second trench gradually decrease from the bottom position of the first trench toward the direction approaching the top electrode; and filling the via hole with top electrode contacts. In the fabrication method of the present disclosure, the performance deterioration of the magnetic tunnel structure is prevented, and the production yield is improved.
Inventors:
WANG XIAOGUANG (CN)
LI HUIHUI (CN)
HU XIANQIN (CN)
LI HUIHUI (CN)
HU XIANQIN (CN)
Application Number:
PCT/CN2022/078050
Publication Date:
January 12, 2023
Filing Date:
February 25, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
International Classes:
H01L43/12
Foreign References:
| CN107302051A | 2017-10-27 | |||
| CN111435702A | 2020-07-21 | |||
| US20180240968A1 | 2018-08-23 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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