Title:
METHOD OF FABRICATING SILICON CARBIDE
Document Type and Number:
WIPO Patent Application WO/2013/019068
Kind Code:
A2
Abstract:
A method of fabricating silicon carbide according to the embodiment comprises the steps of preparing a mixture by mixing a dry silicon source with a carbon source comprising an organic carbon compound; and reacting the mixture, wherein a viscosity of the carbon source is in a range of 20 cps to 1000 cps.
Inventors:
HAN JUNG EUN (KR)
KIM BYUNG SOOK (KR)
KIM BYUNG SOOK (KR)
Application Number:
PCT/KR2012/006123
Publication Date:
February 07, 2013
Filing Date:
August 01, 2012
Export Citation:
Assignee:
LG INNOTEK CO LTD (KR)
HAN JUNG EUN (KR)
KIM BYUNG SOOK (KR)
HAN JUNG EUN (KR)
KIM BYUNG SOOK (KR)
International Classes:
C01B31/36; B01F3/18; B01J6/00
Foreign References:
| KR20110021530A | 2011-03-04 | |||
| KR20100071863A | 2010-06-29 | |||
| JP3174622B2 | 2001-06-11 |
Attorney, Agent or Firm:
SEO, Kyo Jun (832-41,Yeoksam-dong,,Gangnam-gu, Seoul 135-080, KR)
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Claims: