Title:
METHOD OF FABRICATING A STORAGE GATE PIXEL DESIGN
Document Type and Number:
WIPO Patent Application WO2006023428
Kind Code:
A3
Abstract:
A method of fabricating a pixel cell having a shutter gate structure. First and second charge barriers are respectively created between a photodiode and a first charge storage region and between the first storage region and a floating diffusion region. A global shutter gate is formed to control the charge barrier and transfer charges from the photodiode to the first charge storage region by effectively lowering the first charge barrier. A transfer transistor acts to transfer charges from the first storage region to the floating diffusion region by reducing the second charge barrier.
Inventors:
PATRICK INNA (US)
HONG SUNGKWON CHRIS (US)
HONG SUNGKWON CHRIS (US)
Application Number:
PCT/US2005/028913
Publication Date:
July 06, 2006
Filing Date:
August 15, 2005
Export Citation:
Assignee:
MICRON TECHNOLOGY INC (US)
PATRICK INNA (US)
HONG SUNGKWON CHRIS (US)
PATRICK INNA (US)
HONG SUNGKWON CHRIS (US)
International Classes:
H01L27/146
Foreign References:
| US20030096438A1 | 2003-05-22 |
Other References:
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 01 31 January 2000 (2000-01-31)
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