Title:
METHOD FOR FORMING ACTIVE AREA ARRAY
Document Type and Number:
WIPO Patent Application WO/2021/208649
Kind Code:
A1
Abstract:
A method for forming an active area array, comprising: providing a substrate, and forming a first hard mask layer on a surface of the substrate; patterning the first hard mask layer by using a composite etching process to form an active area shielding layer in the first hard mask layer, a pattern of the active area shielding layer matching a pattern of the active area array to be formed, and the composite etching process comprising at least two patterning processes and at least one pattern transfer process; removing the remaining first hard mask layer; and forming the active area array in the substrate by means of the active area shielding layer.
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Inventors:
LIU CHIHCHENG (CN)
Application Number:
PCT/CN2021/080332
Publication Date:
October 21, 2021
Filing Date:
March 12, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/762
Foreign References:
| CN107946232A | 2018-04-20 | |||
| CN101106109A | 2008-01-16 | |||
| CN208738216U | 2019-04-12 | |||
| CN110943045A | 2020-03-31 | |||
| US20110177518A1 | 2011-07-21 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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