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Title:
METHOD FOR FORMING GATE LINE ELECTRODE OF PHOTOVOLTAIC DEVICE AND PHOTOVOLTAIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/185350
Kind Code:
A1
Abstract:
The present application relates to the field of solar cells, and provides a method for forming a gate line electrode of a photovoltaic device and the photovoltaic device. The method for forming the gate line electrode of the photovoltaic device comprises: providing a semiconductor substrate comprising a first surface and a second surface arranged opposite to each other; forming a first patterned mask layer on the first surface; using light-induced electroplating to enable a light source to illuminate the second surface, and enabling the first surface to be in contact with an electroplating solution so as to form a first gate line electrode on the first surface; forming a second patterned mask layer on the second surface; and forming a second gate line electrode on the second surface by means of electroplating or a combination of light induction and electroplating. According to the present invention, the utilization rate of the light source by a cell can be improved, the use of a copper seed layer process step is avoided, sputtering damage and copper removal damage are reduced, the pulling-out force and electroplating uniformity of the gate line electrode can be improved, and the electroplating of an extremely fine metal gate line electrode can be realized, so that the short-circuit current of the cell can be improved, and the photoelectric conversion efficiency of the cell can be improved.

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Inventors:
YU CAO (CN)
DONG GANGQIANG (CN)
Application Number:
PCT/CN2023/078529
Publication Date:
October 05, 2023
Filing Date:
February 27, 2023
Export Citation:
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Assignee:
SUZHOU MAXWELL TECH CO LTD (CN)
International Classes:
H01L31/18; C25D5/00; H01L31/0224
Foreign References:
CN114695599A2022-07-01
CN108649077A2018-10-12
US20160064592A12016-03-03
US20170256661A12017-09-07
CN103996752A2014-08-20
US20190148579A12019-05-16
Attorney, Agent or Firm:
BEIJING JINZHIPUHUA INTELLECTUAL PROPERTY AGENCY CO.LTD (CN)
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